Related papers: Third Harmonic Characterization of Antiferromagnet…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
The newly discovered altermagnets are unconventional collinear compensated magnetic systems, exhibiting even (d, g, or i-wave) spin-polarization order in the band structure, setting them apart from conventional collinear ferromagnets and…
Antiferromagnets as active elements of spintronics can be faster than their ferromagnetic counterparts and more robust to magnetic noise. Owing to the strongly exchange-coupled magnetic sublattice structure, antiferromagnetic order…
We investigate spin dynamics in $\alpha$-Fe$_{2}$O$_{3}$/Ni$_{80}$Fe$_{20}$ (Py) heterostructures, uncovering a robust mechanism for in-situ modulation of ferromagnetic resonance (FMR) through precise control of temperature, applied…
Finding efficient and ultrafast ways to control antiferromagnets is believed to be instrumental in unlocking their potential for magnetic devices operating at THz frequencies. Still, it is challenged by the absence of net magnetization in…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…
Photo-Thermoelectric (PTE) response is usually one of the main working mechanisms for photodetectors. However, as another fast and easier way to measure thermoelectric characteristics of materials, it can also reveal important physics such…
Stimulated by recent studies of quantum phases with broken local inversion symmetry, we study the magnetoelectric effect in locally noncentrosymmetric metals. We consider three-dimensional (3D) coupled zigzag chains and demonstrate that the…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Longitudinal spin Seebeck effect has been investigated for an uniaxial antiferromagnetic insulator Cr2O3, characterized by a spin-flop transition under magnetic field along the c-axis. We have found that temperature gradient applied normal…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
Recently, canted antiferromagnets offer great potential for fundamental research and applications due to their unique properties. The presence of the Dzyaloshinskii-Moriya interaction leads to the existence of a weak ferromagnetic moment at…
Altermagnetism, a new phase of collinear spin-order sharing similarities with antiferromagnets and ferromagnets, has introduced a new guiding principle for spintronic/thermoelectric applications due to its direction-dependent magnetic…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here we experimentally investigate the thermally interplayed…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…