Related papers: Giant optical oscillator strengths in perturbed he…
In this work we demonstrate the inelastic scattering of slow-electron wavepackets at a propagating Hermite-Gaussian light beam. The pulsed Hermite-Gaussian beam thereby forms a ponderomotive potential for the electron with large enough…
In twisted homobilayer transition metal dichalcogenides, intra- and inter-layer valley excitons hybridize with the layer configurations spatially varying in the moir\'e. The ground state valley excitons are trapped at two high-symmetry…
We investigate experimentally a Bose Einstein condensate placed in a 1D optical lattice whose phase is modulated at a frequency large compared to all characteristic frequencies. As a result, the depth of the periodic potential is…
Twisted light carries a well-defined orbital angular momentum (OAM) per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultra-wide…
Recently it has been discovered that lanthanum, yttrium, and other metal hydride films show dramatic changes in the optical properties at the metal-insulator transition. Such changes on a high energy scale suggest the electronic structure…
The perfect lens property of a dispersive and lossy left-handed metamaterial (LHM) disk is exploited to superimpose a source of electromagnetic radiation onto its mirror image, formed as a result of reflection from a perfect electric…
We skillfully utilized vacuum induced coherence to amplify the probe light, and then successfully achieved both nonreciprocal reflection and lasing oscillation in a single physical system by leveraging the distributed feedback and spatial…
We develop a perturbative method of computing spectral singularities of a Schreodinger operator defined by a general complex potential that vanishes outside a closed interval. These can be realized as zero-width resonances in optical gain…
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
The optoelectronic properties induced by oxygen vacancy defects in MgO(111) monolayers have been studied using hybrid level of DFT method. HSE calculations shows significant reduction in electronic band gap of MgO monolayer as a result of…
Recently, holey graphene (HG) has successfully synthesized at atomic precision of hole size and shape. This shows interesting physical and chemical properties for energy and environmental applications. Shaping of the pores also transforms…
The tunability of materials properties by light promises a wealth of future applications in energy conversion and information technology. Strongly correlated materials such as transition-metal dichalcogenides (TMDCs) offer optical control…
Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator…
In this work the complete L-emission spectrum of gadolinium with respect to line energies, natural line widths, and relative transition probabilities was investigated using monochromatized synchrotron radiation. The measurements were…
Optical lattice loaded with cold atoms can exhibit a tunable photonic band gap for a weak probe field under the conditions of electromagnetically induced transparency. This system possesses a number of advantageous properties, including…
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain…
The optical properties of transition metal dichalcogenide monolayers are widely dominated by excitons, Coulomb-bound electron-hole pairs. These quasi-particles exhibit giant oscillator strength and give rise to narrow-band, well-pronounced…
The deformation of hexagonal lattices has attracted considerable attention due to its promising applications in straintronics. This study employs the tight-binding model to investigate the anisotropic spectrum, where electronic transport…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
The complex interplay between several active degrees of freedom (charge, lattice, orbtial and spin order) is thought to determine the electronic properties of many oxides, but the respective role of the various contributions is often…