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Related papers: Phase-dependent epitaxy for antimonene growth on s…

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Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…

Nanostructured electronic devices, such as those based on graphene, are typically grown on top of the insulator SiO2. Their exposure to a flux of small size-selected silver nanoparticles has revealed remarkably selective adhesion: the…

Atomic and Molecular Clusters · Physics 2023-07-14 Patrick J. Edwards , Sean Stuart , James T. Farmer , Ran Shi , Run Long , Oleg V. Prezhdo , Vitaly V. Kresin

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls…

Materials Science · Physics 2018-12-24 J. Sadowski , P. Dziawa , A. Kaleta , B. Kurowska , A. Reszka , T. Story , S. Kret

Understanding the sticking coefficient $\sigma$, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, $\sigma$ on monolayer graphene-covered surfaces…

Materials Science · Physics 2025-12-18 Zach LaDuca , Katherine Su , Sebastian Manzo , Michael S. Arnold , Jason K. Kawasaki

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band…

Dendrite growth is a long-standing challenge that has limited the applications of rechargeable lithium metal electrodes. Here, we developed a grand potential based nonlinear phase-field model to study the electrodeposition of lithium as…

Materials Science · Physics 2018-09-12 Zijian Hong , Venkatasubramanian Viswanathan

Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or…

Mesoscale and Nanoscale Physics · Physics 2017-11-22 Jin-Peng Xu , Jun-Qiu Zhang , Hao Tian , Hu Xu , Wingkin Ho , Maohai Xie

Silicene, a monolayer of silicon atoms tightly packed into a two-dimensional honeycomb lattice, is the challenging hypothetical reflection in the silicon realm of graphene, a one-atom thick graphite sheet, presently the hottest material in…

Materials Science · Physics 2008-11-18 A. Kara , C. Leandri , M. E. Davila , P. de Padova , B. Ealet , H. Oughaddou , B. Aufray , G. Le Lay

Silicon nanowires grown along the <100>-direction with a bulk Si core are studied with density functional calculations. Two surface reconstructions prevail after exploration of a large fraction of the phase space of nanowire…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 R. Rurali , N. Lorente

This chapter starts with a summary of the atomistic processes that occur during epitaxy. We then introduce density functional theory (DFT) and describe its implementation into state-of-the-art computations of complex processes in condensed…

Condensed Matter · Physics 2009-09-25 P. Ruggerone , C. Ratsch , M. Scheffler

Chemically synthesized single-crystalline gold microplates have been attracting increasing interests because of their potential as high-quality gold films for nanotechnology. We present the growth of tens of nanometer thick and tens of…

Materials Science · Physics 2016-12-28 Xiaofei Wu , René Kullock , Enno Krauss , Bert Hecht

Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory…

Antimony shows promise as a two-dimensional (2D) mono-elemental crystal, referred to as antimonene. When exposed to ambient conditions, antimonene layers react with oxygen, forming new crystal structures, leading significant changes in…

Materials Science · Physics 2024-06-26 Stefan Wolff , Roland Gillen , Janina Maultzsch

A major issue in the development of the technology of nitride based materials is the choice of substrate. The structural and optical properties of the layers are intimately connected to the substrate material used in the epitaxial growth.…

Materials Science · Physics 2007-05-23 Tim K. Hossain , James V. Lindesay , Michael G. Spencer

The growth morphology of clean silver exhibits a profound anisotropy: The growing surface of Ag(111) is typically very rough while that of Ag(100) is smooth and flat. This serious and important difference is unexpected, not understood, and…

mtrl-th · Physics 2009-10-30 Byung Deok Yu , Matthias Scheffler

Based on first-principles calculations, we propose that a layered electride Mg2O can serve as an effective substrate, in place of metal substrate, to grow honeycomb borophene (h-borophene). We first confirm the thermodynamic stability of…

Materials Science · Physics 2019-04-09 Xiaojuan Ni , Huaqing Huang , Kyung-Hwan Jin , Zhengfei Wang , Feng Liu

The hexagonal structure of graphene gives rise to the property of gas impermeability, motivating its investigation for a new application: protection of semiconductor photocathodes in electron accelerators. These materials are extremely…

Employing density functional theory calculations we explore initial stage of competitive alloying of co-deposited silver and indium atoms into a silicon surface. Particularly, we identify respective adsorption positions and activation…

Materials Science · Physics 2023-02-17 D. V. Prodan , G. V. Paradezhenko , D. Yudin , A. A. Pervishko

Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent…

Materials Science · Physics 2025-06-23 Puspendu Guha , Sangmin Lee , Eunsu Lee , Hyeonhu Bae , Hoonkyung Lee , Miyoung Kim , Gyu-Chul Yi

Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led…