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The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond…

Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 E. Bielejec , J. A. Seamons , M. S. Carroll

Recent efforts to define microscopic solid-immersion-lenses (SIL) by focused ion beam milling into diamond substrates that are registered to a preselected single photon emitter are summarized. We show how we determine the position of a…

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable…

Single ion implantation using focused ion beam systems enables high spatial resolution and maskless doping for rapid and scalable engineering of materials for quantum technologies, particularly qubits and colour centres in solid-state…

Materials Science · Physics 2025-10-02 Mason Adshead , Lok Kan Wan , Maddison Coke , Richard J Curry

The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we…

The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a…

Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation…

Quantum Physics · Physics 2021-08-11 K. Groot-Berning , G. Jacob , C. Osterkamp , F. Jelezko , F. Schmidt-Kaler

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a…

Mesoscale and Nanoscale Physics · Physics 2018-01-17 J. L. Pacheco , M. Singh , D. L. Perry , J. R. Wendt , G. Ten Eyck , R. P. Manginell , T. Pluym , D. R. Luhman , M. P. Lilly , M. S. Carroll , E. Bielejec

Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by…

The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow…

Mesoscale and Nanoscale Physics · Physics 2016-04-26 Ruffin E. Evans , Alp Sipahigil , Denis D. Sukachev , Alexander S. Zibrov , Mikhail D. Lukin

Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field…

We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the…

Materials Science · Physics 2011-03-03 David Steinmetz , Elke Neu , Jan Meijer , Wolfgang Bolse , Christoph Becher

We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for…

Materials Science · Physics 2016-08-26 F. Bosia , N. Argiolas , M. Bazzan , P. Olivero , F. Picollo , A. Sordini , M. Vannoni , E. Vittone

The efficiency of collecting photons from optically active defect centres in bulk diamond is greatly reduced by refraction and reflection at the diamond-air interface. We report on the fabrication and measurement of a geometrical solution…

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…

Condensed Matter · Physics 2015-06-24 T. Schenkel , J. P. Holder , J. W. McDonald , J. Meijer , A. Persaud , D. H. Schneider

This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined…

Instrumentation and Detectors · Physics 2016-08-30 P. Olivero , J. Forneris , M. Jaksic , Z. Pastuovic , F. Picollo , N. Skukan , E. Vittone

We report on the systematic characterization of photoluminescence (PL) lifetimes in NV- and NV0 centers in 2 MeV H+ implanted type Ib diamond samples by means of a time correlated single photon counting (TCSPC) microscopy technique. A…

Materials Science · Physics 2014-05-06 D. Gatto Monticone , F. Quercioli , R. Mercatelli , S. Soria , S. Borini , T. Poli , M. Vannoni , E. Vittone , P. Olivero
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