Related papers: A kiloelectron-volt ultrafast electron micro-diffr…
In modern high-gain free-electron lasers, ultra-fast photon pulses designed for studying chemical, atomic and biological systems are generated from a serial of behaviors of high-brightness electron beam at the time-scale ranging from…
Theory predicts that with an ultrashort and extremely bright coherent X-ray pulse, a single diffraction pattern may be recorded from a large macromolecule, a virus, or a cell before the sample explodes and turns into a plasma. Here we…
Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in…
A high-performance fast response deep ultraviolet (UV) photodetectors with interdigitated Ti/Au planar electrodes using a lithography technology has fabricated on homoepitaxial diamond. The device shows a high ultraviolet photocurrent at…
The operation of Ultrafast Electron Diffractometers (UEDs) and Free-Electron Lasers (FELs) relies on high-brightness electron beams produced by radio-frequency (RF) photocathode guns. The next generation of high-repetition rate UEDs and…
We demonstrate compression of 95 keV, space-charge-dominated electron bunches to sub-100 fs durations. These bunches have sufficient charge (200 fC) and are of sufficient quality to capture a diffraction pattern with a single shot, which we…
High-repetition-rate sources of bright electron bunches have a wide range of applications. They can directly be employed as probes in electron-scattering setups, or serve as a backbone for the generation of radiation over a broad range of…
A monolithic active pixel sensor based direct detector that is optimized for the primary beam energies in scanning electron microscopes is implemented for electron back-scattered diffraction (EBSD) applications. The high detection…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
We propose a simple laser-driven electron acceleration scheme based on tightly focused radially polarized laser pulses for the production of femtosecond electron bunches with energies in the few-hundreds-of-keV range. In this method, the…
The ability to resolve the dynamics of matter on its native temporal and spatial scales constitutes a key challenge and convergent theme across chemistry, biology, and materials science. The last couple of decades have witnessed ultrafast…
X-ray photoelectron diffraction is a powerful tool for determining the structure of clean and adsorbate-covered surfaces. Extending the technique into the ultrafast time domain will open the door to studies as diverse as the direct…
Semiconductor quantum dots in microcavities are an excellent platform for the efficient generation of indistinguishable single photons. However, their use in a wide range of quantum technologies requires their controlled fabrication and…
Time-resolved photoconductivity is widely used to characterize non-equilibrium charge-carrier lifetime, impurity content, and solar cell efficiency in a broad range of semiconductors. Most measurements are limited to the detection of…
In the past decade, the bunch lengths of electrons in accelerators have decreased dramatically to the range of a few picoseconds \cite{Uesaka94,Trotz97}. Measurement of the length as well as the longitudinal profile of these short bunches…
Cold atom electron sources are a promising alternative to traditional photocathode sources for use in ultrafast electron diffraction due to greatly reduced electron temperature at creation, and the potential for a corresponding increase in…
CW photoinjectors operating at high accelerating gradients promise to revolutionize many areas of science and applications. They can establish the basis for a new generation of monochromatic X-ray free electron lasers, high brightness…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
Accurate temperature measurement at the nanoscale is crucial for thermal management in next-generation microelectronic devices. Existing optical and scanning-probe thermometry techniques face limitations in spatial resolution, accuracy, or…
One of the frontiers in electron scattering is to couple ultrafast temporal resolution with highly localized probes to investigate the role of microstructure on material properties. Here, taking advantage of the unprecedented average…