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Related papers: Zinc Oxide-Based Piezoelectric Pressure Sensor

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Hexagonal [0001] nonpassivated ZnO nanowires are studied with density functional calculations. The band gap and Young's modulus in nanowires which are larger than those in bulk ZnO increase along with the decrease of the radius of…

Materials Science · Physics 2007-05-23 H. J. Xiang , Jinlong Yang , J. G. Hou , Qingshi Zhu

During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In…

Piezoelectric PZT solid solutions were studied as a function of pressure and temperature. Moderate pressure is found to induce phase transitions to monoclinic phases (Cm,Cc) for Ti-rich PZT, which are the same ferroelectric phases…

Materials Science · Physics 2009-05-14 Jérôme Rouquette , Julien Haines , Véronique Bornand , Philippe Papet

Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the…

In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structure and morphology and synthesized by pulsed laser deposition (PLD)…

Materials Science · Physics 2017-10-12 V. Russo , M. Ghidelli , P. Gondoni , C. S. Casari , A. Li Bassi

Thin films of ZnO:SnO2 were deposited on different substrates like glass and c-Si using spray pyrolysis method .The structures and morphology of the prepared samples films were cheeked using X-ray diffraction and atomic force microscope.…

Materials Science · Physics 2018-08-14 Sahar M. Naif , Bushra A. Hasan

We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type,…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 Leisheng Jin , Lijie Li

Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate…

Materials Science · Physics 2023-02-17 Kiran Jose , J. G. Anjana , Venu Anand , Aswathi R. Nair

A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon…

Applied Physics · Physics 2020-12-02 Jing Wu , Xiaofeng Zhao , Yibo Liu , Dianzhong Wen

The composites of strontium-doped lanthanum manganite (LSMO) with zinc oxide (ZnO) are candidate materials for energy harvesting by virtue of their magnetic and piezoelectric characteristics. They could be used to harvest energy from stray…

Applied Physics · Physics 2017-09-07 Robert Kinner , Abdul-Majeed Azad , G Srinivasan , G Sreenivasulu , Menka Jain

The discovery of very large piezo- and pyroelectric effects in ZrO2 and HfO2-based thin films opens up new opportunities to develop silicon-compatible sensor and actor devices. The effects are amplified close to the polar-orthorhombic to…

Materials Science · Physics 2022-06-02 Richard Ganser , Simon Bongarz , Alexander von Mach , Luis Azevedo Antunes , Alfred Kersch

RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…

Materials Science · Physics 2014-04-22 Navid M. S. Jahed , Siva Sivoththaman

Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate…

Materials Science · Physics 2022-10-21 Mubashir Mansoor , Mehya Mansoor , Maryam Mansoor , Zuhal Er , Kamil Czelej , Mustafa Urgen

We present the results of a computational study of ZnO in the presence of Co and Mn substitutional impurities. The goal of our work is to identify potential ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems that…

Materials Science · Physics 2021-03-09 Nicola A. Spaldin

In the framework of energy scavenging for applications in flexible/strechable electronics, hybrid piezoelectric nanogenerators, made up with Zinc oxyde nanorods, embedded in a polymeric matrix, and growth on a flexible polymeric support,…

Materials Science · Physics 2019-09-04 Maria Laura De Bellis , Andrea Bacigalupo , Giorgio Zavarise

NiO/ZnO-based thin films, including single-layer and heterostructure configurations, were synthesized to investigate the influence of stacking order on their electrochemical performance for supercapacitor applications. To improve the…

The micro-properties (structure and composition), and macro-properties (electrical and optical properties) of zinc oxide (ZnO) thin films deposited on glass substrates using a filtere vacuum arc deposition (FVAD) system were investigated as…

Materials Science · Physics 2009-11-11 T. David , S. Goldsmith , R. L. Boxman

We generalize a previously established ab initio approach-originally developed for hexagonal close-packed (hcp) metals-to accommodate solids with both internal and external degrees of freedom. This extension enables the thermodynamic and…

Materials Science · Physics 2026-03-06 Xuejun Gong , Andrea Dal Corso

In this work, we report optical and photovoltaic properties of ZnO based solid polymeric photoelectrochemical (PEC) cell. In this device construction, film of ZnO nanoparticle (NP) has been sandwiched between ITO and LiClO4-PEO solid…

Materials Science · Physics 2011-05-10 Manoranjan Ghosh , Mima Kurian , P. Veerender , N. Padma , D. K. Aswal , S. K. Gupta , J. V. Yakhmi

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…