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Position-sensitive-detectors (PSDs) based on lateral photoeffect have been widely used in diverse applications, including optical engineering, aerospace and military fields. With increasing demands in long working distance, low energy…
We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system.…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the…
Two-dimensional materials with unique physicochemical properties promote photocatalytic activities. As the 2D material composites research studies the statistical average of complex catalytic behaviors, an integrated photonic platform…
Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit…
Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility…
Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted…
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results…
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…
Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do…
The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication…
Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To…
We report a large third order nonlinear optical response of palladium diselenide (PdSe2) films, a two dimensional (2D) noble metal dichalcogenide material. Both open aperture (OA) and closed aperture (CA) Z scan measurements are performed…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…