Related papers: Accelerated Lifetime Testing and Analysis of Delta…
In this work we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layer in organic photodetectors processed by solution. As PEDOT:PSS is known to be sensitive to humidity, oxygen and UV, removing this…
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $\delta$-layers. We show that, in spite of the known challenges in producing highly confined Sb $\delta$-layers, sufficient…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal…
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal…
Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…
Two-dimensional (2D) massless Dirac electrons appear on a surface of three-dimensional topological insulators. The conductivity of such a 2D Dirac electron system is studied for strong topological insulators in the case of the Fermi level…
Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark…
We present the first results from the HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel ASIC manufactured in 65 nm CMOS by TSMC has been optimized for 50 um thick AC-LGAD. The evaluation of the analog front end…
In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable…
This Letter reports results from the NEMO-3 experiment based on an exposure of 1275 days with 661g of 130Te in the form of enriched and natural tellurium foils. The double beta decay rate of 130Te is found to be greater than zero with a…
Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this…
Measurements of the DC resistivity of under-doped cuprate superconductors have revealed a metal--insulator transition at low temperatures when superconductivity is suppressed by a very large magnetic field, with the resistivity growing…
In the metamaterial with hyperbolic dispersion (an array of silver nanowires in alumina membrane) we have observed six-fold reduction of the emission life-time of dye deposited onto the metamaterials surface. This serves as the evidence of…
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics…
Recently, we demonstrated controllable 3D self-folding by means of capillary forces of silicon-nitride micro-objects made of rigid plates connected to each other by flexible hinges [1]. In this paper, we introduce platinum electrodes…
When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…
For short, high-intensity electron bunches, alkali-tellurides have proved to be a reliable photo-cathode material. Measurements of lifetimes in an RF gun of the CLIC Test Facility II at field strengths greater than 100 MV/m are presented.…