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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing…
Adding spin-polarized carriers to semiconductor lasers strongly changes their properties and, through the transfer of angular momentum, leads to the emission of circularly polarized light. In such spin-lasers, the polarization of the…
The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena. Introducing novel concepts in lasers thus has a potential for both…
Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the…
A semiconductor microcavity embedding donor impurities and excited by a laser field is modelled. By including general decay and dephasing processes, and in particular cavity photon leakage, detailed simulations show that control over the…
Semiconductor microcavities offer unique means of controlling light-matter interactions, which have led to the development of a wide range of applications in optical communications and inspired proposals for quantum information processing…
We demonstrate room-temperature spin-polarized ultrafast ($\sim$10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…
We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the…
The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers,…
Rapid development of ultrafast ultraintense laser technologies continues to create opportunities for studying strong-field physics under extreme conditions. However, accurate determination of the spatial and temporal characteristics of a…
Spin waves in magnetic microresonators are at the core of modern magnonics. Here we demonstrate a new method of tunable excitation of different spin wave modes in magnetic microdisks by using a train of laser pulses coming at a repetition…
Femtosecond laser excitation of materials that exhibit magnetic spin textures promises advanced magnetic control via the generation of ultrafast and non-equilibrium spin dynamics. We explore such possibilities in ferrimagnetic [Fe(0.35…
The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control…
Interference of spin-up and spin-down eigenstates depicts spin rotation of electrons, which is a fundamental concept of quantum mechanics and accepts technological challenges for the electrical spin manipulation. Here, we visualize this…
Quantum control of solid-state spin qubits typically involves pulses in the microwave domain, drawing from the well-developed toolbox of magnetic resonance spectroscopy. Driving a solid-state spin by optical means offers a high-speed…
In the field of spin-controlled semiconductor lasers, massive effort has been focused upon materials with long spin relaxation times (~ns). In contrast, we demonstrate room-temperature spin-polarized ultrafast pulsed lasing in InGaAs…
We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that…
Laser radiation incident on a ferromagnetic sample produces excited electrons and currents whose spin polarization must not be aligned with the magnetization -- an effect due to spin-orbit coupling that is ubiquitous in spin- and…