Related papers: Spin echo from erbium implanted silicon
We consider a SQUID tunneling between 2 nearly degenerate flux states. Decoherence caused by paramagnetic and nuclear spins in the low-$T$ limit is shown to be much stronger than that from electronic excitations. The decoherence time…
Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n-type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin…
A promising platform for quantum information processing is that of silicon impurities, where the quantum states are manipulated by magnetic resonance. Such systems, in abstraction, can be considered as a nucleus of arbitrary spin coupled to…
The realization of spin-based logical gates crucially depends on magnetically-coupled spin qubits. Thus, understanding decoherence when spin qubits are in close proximity will become a roadblock to overcome. Herein, we provide a general…
Superconducting magnets enable precise control of nuclear and electron spins, and are used in experiments that explore biological and condensed matter systems, and fundamental atomic particles. In high-precision applications, a common view…
A pivotal challenge in quantum technologies lies in reconciling long coherence times with efficient manipulation of the quantum states of a system. Lanthanide atoms, with their well-localized 4f electrons, emerge as a promising solution to…
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…
We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker…
Disorder in spin-orbit (SO) coupling is an important feature of real low-dimensional electron structures. We study spin relaxation due to such a disorder as well as resulting abilities of spin manipulation. The spin relaxation reveals…
Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of…
Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of…
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…
Rare-earth-doped crystals are excellent hardware for quantum storage of optical information. Additional functionality of these materials is added by their waveguiding properties allowing for on-chip photonic networks. However, detection and…
An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate…
We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic…
We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the…
Long spin coherence times of carriers are essential for implementing quantum technologies using semiconductor devices for which, however, a possible obstacle is spin relaxation. For the spin dynamics, decisive features are the band…
We report measurements of electron spin echo envelope modulation (ESEEM) performed at millikelvin temperatures in a custom-built high-sensitivity spectrometer based on superconducting micro-resonators. The high quality factor and small mode…