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Materials with magnetoelectric coupling (MEC) between ferroic orders at room temperature are emerging field in modern technology and physics. BaTiO3 is a robust ferroelectric in which several doping has led to MEC. In Ca and Mn modified…
An experimental study of the in-plane azimuthal behaviour and frequency dependence of the ferromagnetic resonance field and the resonance linewidth as a function of BiFeO$_3$ thickness is carried out in a polycrystalline exchange-biased…
In this work, we demonstrate the voltage control of magnetic anisotropy in a strain-mediated Ni90Fe10/BaTiO3(001) heterostructure. In the pristine state of the heterostructure, the Magneto-Optical Kerr Effect measurements show a…
How to efficiently manipulate the N\'eel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we investigated the ferroelectric control of magnetism in AFM…
The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the…
We study the electron-phonon coupling strength near the interface of monolayer and bilayer FeSe thin films on SrTiO$_3$, BaTiO$_3$, and oxygen-vacant SrTiO$_3$ substrates, using ab initio methods. The calculated total electron-phonon…
We report observation of a "non-volatile" converse magneto-electric effect in elliptical FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. The nanomagnets are initially magnetized with a magnetic field directed along their…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…
Gradual modification of the magnetic properties in ferromagnetic films has recently been proposed as an effective method to channel and control spin waves for the development of new functionalities in magnonic devices. Here, we investigate…
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to…
Electric-field control of magnetism without electric currents potentially revolutionizes spintronics towards ultralow power. Here by using mechanically coupled phase field simulations, we computationally demonstrate the application of the…
Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of CuInP$_2$S$_6$ and referred…
Transition-metal nitrides in {\eta}-carbide type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries…
Multiferroic CoFe2O4-Ba0.95Ca0.05Ti0.89Sn0.11O3 core-shell nanofibers (CFO@BCTSn NFs) were synthesized by a sol-gel co-axial electrospinning technique. The scanning electron microscope and transmission electron microscope were used to check…
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications…