Related papers: Defect Dipole Induced Improved Electrocaloric Effe…
Ba{[Gax,Tax]Ti(1-2x)}O3 ceramics with x equal to 0, 0.0025, 0.005, 0.01, 0.025 and 0.05 have been prepared by conventional solid-state reaction. Structural and dielectric characterization have been performed to investigate the effect of…
We explore mechanisms of orbital order decay in doped Mott insulators $R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=\,$Pr,Y,La) caused by charged (Sr,Ca) defects. Our unrestricted Hartree-Fock analysis focuses on the combined effect of random, charged…
Density functional calculations are carried out to understand and tailor the electrochemical profile diffusivity, band gap and open circuit voltage of transition metal doped olivine phosphate $LiFe_{1-x}M_{x}PO_{4}$ (M = V, Cr, Mn, Co and…
We report magnetic and magnetoelectric studies on BiFeO3 and divalent cation (A) suvtitute Bi0.7A0.3FeO3 (A = Sr,Ba, and Sr0.5Ba0.5). It is shown that the rapid increase of magnetization at the Neel temperature (TN = 642 K) is suppressed in…
The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors (DMS) can be increased by co-doping with another conventional electronic dopant (e-dopant) [Zhu et al., Phys. Rev. Lett. 100,…
We report on the nonequilibrium quasiparticle dynamics in BaFe$_2$As$_2$ on both the hole doped (Ba$_{1-x}$K$_x$Fe$_2$As$_2$) and electron doped (BaFe$_{2-y}$Co$_y$As$_2$) sides of the phase diagram using ultrafast pump-probe spectroscopy.…
We have investigated the crystal structure and magnetic properties for polycrystalline samples of LaMn1-xFexO3+y, in the whole range x=0.0 to x=1.0, prepared by solid state reaction in air. All samples show the ORT-2 orthorhombic structure…
We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa$_{3}$ with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual…
In the hole-doped cuprate superconductors, the superconducting transition temperature $T_c$ exhibits a dome-like feature against the doping rate. By contrast, recent experiments reveal that $T_c$ in the electron-doped systems monotonically…
Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ…
The unique electrical and optical properties of emerging two-dimensional transition metal dichal-cogenides (TMDs) present compelling advantages over conventional semiconductors, including Si, Ge, and GaAs. Nevertheless, realising the full…
Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $Nd_{2-x}Ce_xCuO_{4+\delta}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP…
The recent discovery of high-$T_c$ superconductivity in Ruddlesden-Popper (RP) nickelates has motivated extensive efforts to explore higher $T_c$ superconductors. Here, we systematically investigate Nd-doped La$_3$Ni$_2$O$_7$ using density…
The ABO3 type charge-ordered antiferromagnetic Nd0.50Ca0.50MnO3 (NCMO) manganite is doped at A-site by 3 % of Ba2+ for Ca2+. The resulting system, Nd0.50Ca0.47Ba0.03MnO3 (NCBMO), is studied for the effects of Ba doping on the magnetic and…
Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single…
Bulk n-type SrTiO3 (STO) has long been known to possess a superconducting ground state at an exceptionally dilute carrier density. This has raised questions about the applicability of the BCS-Eliashberg paradigm with its underlying…
Using first principle calculations, we examine the sequence of phases in electron doped dichalcogenides, such as recently realized in field-gated MoS$_2$. Upon increasing the electron doping level, we observe a succession of semiconducting,…
The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently…
Lead-free materials based on the $\text{(Ba,Ca)(Zr,Ti)O}_{3}$ (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a high throughput strategy to unravel the…
Temperature dependent thermoelectric power (TEP) data on Ba(Fe1-xTMx)2As2 (TM = Co and Cu), complemented by the Hall coefficient data on the samples from the same batches, have been measured. For Co-doping we clearly see a change in the…