Related papers: Synthesis and study of ScN thin films
ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…
We report a nascent real time Stranski-Krastanov growth of reactively sputtered ScNx thin films on MgO(100). The epitaxial growth was limited to 5 nm at a substrate temperature (Ts) of 25 C while the self-sustaining epitaxial nature along…
Some ternary TM nitrides are predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Synthesis of TM ternary nitride films by physical vapor deposition often favors…
The present study delves into exploring the impact of a thin protective layer of scandium nitride (ScN) on the superconductive properties of thin films of niobium nitride (NbN) generated through reactive magnetron deposition. This is the…
AlScN thin films were grown via metalorganic chemical vapor deposition (MOCVD), showing controllable incorporation of scandium (Sc) into the AlN lattices. Systematic variation of growth parameters demonstrated an obvious influence on Sc…
Superconducting NbTiN thin films have garnered extensive interest due to their use in Superconducting Nanowire Single-Photon Detectors (SNSPDs) and other low-temperature applications for potential use in quantum computing and…
Nickel nitride (Ni-N) thin film samples were deposited using reactive magnetron sputtering process utilizing different partial flow of N2 (RN2). They were characterized using x-ray reflectivity (XRR), x-ray diffraction (XRD) and x-ray…
In this work, we studied cobalt nitride (Co-N) thin films deposited using a dc magnetron sputtering method at a substrate temperature (\Ts) of 523\,K. We find that independent of the reactive gas flow (\pn) used during sputtering, the…
Ion implantation is a powerful approach for tuning the electrical properties of materials through controlled doping and defect engineering, with applications in thermoelectrics and microelectronics. Scandium nitride (ScN) is particularly…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
ScN is an emerging transition metal nitride with unique physical properties arising from the d-electrons of Sc. In this work we present the results of optical characterization techniques spectroscopic ellipsometry, Raman spectroscopy, and…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
Sculptured copper thin films were deposited on glass substrates, using different deposition rates. The nano-structure and morphology of the films were obtained, using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning…
Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for…
The structures, optical and electrical transport properties of SnO$_2$ films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of…
This work investigates the effect of a scandium nitride buffer layer on the superconducting properties of niobium nitride thin films. The use of a ScN buffer layer significantly improves the characteristics of 29 nm thick NbN films: the…
This work reports a pulsed laser-assisted synthesis, detailed structural characterization, and study of plasmonic properties of three sets of TiN/TiNO thin films with high electron density. The first two sets of TiN films were grown at 600C…
The electronic properties of superconducting Sn films ($T_c \approx$ 3.8 K) change significantly when reducing the film thickness down to a few nm, in particular close to the percolation threshold. The low-energy electrodynamics of such Sn…
The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…