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Magnetic topological insulators provide a unique platform to explore the interplay between magnetism and topology. MnBi$_2$Te$_4$, known for its A-type antiferromagnetic (AFM) ground state, undergoes a striking transformation when single…
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…
The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion…
Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically-driven spintronics. Currently, magnetotransport investigations on these materials are…
We report results of the first studies on the magnetic and transport properties of a new material CeNiBi_2. The magnetic susceptibility exhibits a sharp peak at T_N = 6K, indicating an antiferromagnetic phase transition. This…
The fine control of magnetism and electronic structure is crucial since the interplay between magnetism and band topology can lead to various novel magnetic topological states including axion insulators, magnetic Weyl semimetals and Chern…
MnBi$_4$Te$_{7}$ and MnBi$_6$Te$_{10}$ are two members with n=2 and 3 in the family of MnBi$_{2n}$Te$_{3n+1}$ where the n=1 member, MnBi$_2$Te$_{4}$, has been intensively investigated as the first intrinsic antiferromagnetic topological…
The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered…
The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that…
MnBi$_2$Te$_4$ (MBT) is the first intrinsic magnetic topological insulator, combining a topologically protected surface metallic state and intrinsic magnetic order. A structural compatibility with the nonmagnetic Bi$_2$Te$_3$ (BT) parent…
The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to…
Using single crystal neutron diffraction, we present a systematic investigation of the crystal structure and magnetism of van der Waals topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$, where rich topological quantum states have…
Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in…
The concept of electronic topology and the associated topological protection brings excellent opportunities for developing next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or…
The intrinsically anti-ferromagnetic topological insulator, MnBi$_2$Te$_4$ (MBT), has garnered significant attention recently. The excitement for this layered van der Waals bonded compound stems from its potential to host numerous exotic…
The magnetic topological insulator, MnBi$_2$Te$_4$, shows metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission…
As the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi$_2$Te$_4$ has provided a material platform to realize various emergent phenomena arising from the interplay of magnetism and band topology. Here by…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
First-principles calculations are performed to study the electronic structures and topological phases of magnetic layered materials MnBi2Te4, MnBi2Se4 and MnSb2Te4 under different film thicknesses, strains and spin-orbit coupling (SOC)…
In this report, we present the magnetotransport and magnetization properties of LaSbTe single crystals. Magnetic field-induced turn-on behavior and low-temperature resistivity plateau have been observed. By adopting both metal-semiconductor…