Related papers: Pinpointing the Dominant Component of Contact Resi…
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer…
We consider a two-component scaling picture for the resistivity of two-dimensional (2D) weakly disordered interacting electron systems at low temperature with the aim of describing both the vicinity of the bifurcation and the low resistance…
Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS$_2$ with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS$_2$,…
Atomically thin 2D materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform. An understanding the role of excitons in transition metal…
The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic…
Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open…
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for…
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions…
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional…
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along…
The power and energy consumption of resistive switching devices can be lowered by reducing their active layer dimensions. Efforts to push this low-energy switching property to its limits have led to the investigation of active regions made…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here,…
The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on…
The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation…