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Related papers: Mobility in N-Doped Wurtzite III-Nitrides

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Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of…

Wurtzite-type ferroelectrics are highly promising for next-generation microelectronic devices due to their ferroelectric properties and integration with exiting semiconductors. However, their high coercive fields, which are close to…

Materials Science · Physics 2025-02-19 Yuto Shimomura , Saneyuki Ohno , Katsuro Hayashi , Hirofumi Akamatsu

Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be…

Strongly Correlated Electrons · Physics 2017-08-02 K. Wolff , R. Schäfer , M. Meffert , D. Gerthsen , R. Schneider , D. Fuchs

We investigate the electronic structure of nickelate superconductor NdNiO2 upon hole doping, by means of density-functional theory and dynamical mean-field theory. We demonstrate the strong intrinsic hybridization between strongly…

Strongly Correlated Electrons · Physics 2021-01-13 Zhao Liu , Chenchao Xu , Chao Cao , W. Zhu , Z. F. Wang , Jinlong Yang

Doped SrTiO3 becomes a metal at extremely low doping concentrations n and is even superconducting with the superconducting transition temperature adopting a dome-like shape with the carrier concentration. It is shown here within the…

Materials Science · Physics 2019-10-08 Annette Bussmann-Holder , Hugo Keller , Arndt Simon , Krystian Roleder , Krzysztof Szot

We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in…

Materials Science · Physics 2013-12-06 Miguel A. Caro , Stefan Schulz , Eoin P. O'Reilly

We probe the density-wave transition of the trilayer nickelate La$_4$Ni$_3$O$_{10}$ with polarization-resolved infrared spectroscopy. The low-energy electrodynamics is strongly anisotropic, with metallic in-plane and insulating out-of-plane…

Most microscopic descriptions of structural dynamics assume the Born-Oppenheimer separation, where electrons adjust adiabatically to ionic motion. When this separation breaks down, electronic and lattice degrees of freedom can evolve on…

Materials Science · Physics 2026-02-26 Gili Scharf , Lara Donval , Leah Ben Gur , Alon Ron

The spinel/perovskite heterointerface $\gamma$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of…

Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to…

The effects of lattice distortion and chemical disorder on charge transport properties of two-terminal zigzag phosphorene nanoribbons (zPNRs), which shows resonant tunneling behavior under an electrical applied bias, are studied. Our…

Mesoscale and Nanoscale Physics · Physics 2018-11-21 Zahra Nourbakhsh , Reza Asgari

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the…

Mesoscale and Nanoscale Physics · Physics 2016-07-21 Han Fu , K. V. Reich , B. I. Shklovskii

The perovskite nickelates RNiO$_3$ (R: rare-earth) have been studied as potential multiferroic compounds. A certain degree of charge disproportionation in the Ni ions has been confirmed by high resolution synchrotron power diffraction:…

Strongly Correlated Electrons · Physics 2015-09-03 Ivon R. Buitrago , Cecilia I. Ventura

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these…

Materials Science · Physics 2008-10-22 K. S. Burch , D. D. Awschalom , D. N. Basov

The transport properties of quantum dots with up to N=7 electrons ranging from the weak to the strong interacting regime are investigated via the projected Hartree-Fock technique. As interactions increase radial order develops in the dot,…

Mesoscale and Nanoscale Physics · Physics 2011-10-10 F. Cavaliere , U. De Giovannini , M. Sassetti , B. Kramer

In a number of physical situations, from polarons to Dirac liquids and to non-Fermi liquids, one encounters the "beyond quasiparticles" regime, in which the inelastic scattering rate exceeds the thermal energy of quasiparticles. Transport…

Strongly Correlated Electrons · Physics 2019-08-15 Andrey S. Mishchenko , Lode Pollet , Nikolay V. Prokof'ev , Abhishek Kumar , Dmitrii L. Maslov , Naoto Nagaosa

Wurtzite-type nitrides have recently emerged as promising candidates for ferroelectric applications, yet their magnetic counterparts remain largely unexplored. Here, we establish MnSiN$_2$ and MnGeN$_2$ as aristotypes of a new multiferroic…

Materials Science · Physics 2025-09-09 Steven M. Baksa , Lin-Ding Yuan , Stephen D. Wilson , James M. Rondinelli

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

Materials Science · Physics 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

The ultrafast manipulation of magnetic order due to optical excitation is governed by the intricate flow of energy and momentum between the electron, lattice and spin subsystems. While various models are commonly employed to describe these…

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

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