Related papers: All-optical spin injection in silicon revealed by …
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
Laser radiation incident on a ferromagnetic sample produces excited electrons and currents whose spin polarization must not be aligned with the magnetization -- an effect due to spin-orbit coupling that is ubiquitous in spin- and…
Magneto-optical sensors including spin noise spectroscopies and magneto-optical Kerr effect microscopies are now ubiquitous tools for materials characterization that can provide new understanding of spin dynamics, hyperfine interactions,…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…
Discovering and engineering spin-polarised surface states in the electronic structures of condensed matter systems is a crucial first step in development of spintronic devices, wherein spin-polarised bands crossing the Fermi level can…
The optically induced spin dynamics of a single Mn atom embedded into a single semiconductor quantum dot can be strongly influenced by using the optical Stark effect. The exchange interaction gives rise to simultaneous spin flips between…
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…
The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for…
Coherent spin-wave generation by focused ultrashort laser pulse irradiation was investigated for a permalloy thin film at micrometer scale using an all-optical space and time-resolved magneto-optical Kerr effect. The spin-wave packet…
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well.…
Ultrafast demagnetization induced by femtosecond laser pulses in thin metallic layers is caused by the outflow of spin-polarized hot electron currents describable by the superdiffusive transport model. These laser-generated spin currents…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
We report on the first experimental observation of spin noise in a single semiconductor quantum well embedded into a microcavity. The great cavity-enhanced sensitivity to fluctuations of optical anisotropy has allowed us to measure the Kerr…
Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a…
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical…
We propose a semi-classical model for femtosecond-laser induced demagnetization due to spin-polarized excited electron diffusion in the super-diffusive regime. Our approach treats the finite elapsed time and transport in space between…
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications…
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…
The exponential growth of computing needs for artificial intelligence and machine learning has had a dramatic impact on data centre energy consumption, which has risen to environmentally significant levels. Using light to send information…
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…