Related papers: All-optical spin injection in silicon revealed by …
Nonlinear optical interactions in nanostructures are subjects of both fundamental research and practical applications. The optical Kerr effect, a third-order nonlinear optical phenomenon, induces anisotropic changes in the refractive index…
Spin angular momentum transfer in magnetic bilayers offers the possibility of ultrafast and low-loss operation for next-generation spintronic devices. We report the field- and temperature- dependent measurements on the magnetization…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
This paper is concerned with a theoretical analysis of the behavior of optically excited spin currents in bilayer and multilayer systems of ferromagnetic and normal metals. As the propagation, control and manipulation of the spin currents…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…
We propose a dynamical explanation of the Meissner effect in superconductors and predict the existence of a spin Meissner effect: that a macroscopic spin current flows within a London penetration depth $\lambda_L$ of the surface of…
An ultrafast spin current can be induced by femtosecond laser excitation in a ferromagnetic (FM) thin film in contact with a nonmagnetic (NM) metal. The propagation of an ultrafast spin current into NM metal has recently been found in…
Altermagnets constitute an emerging materials platform for spintronic technologies by combining compensated magnetic order with ferromagnet-like spin-split electronic bands. Here, we investigate the proposed d-wave altermagnetic material…
The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and "{\pi}" Josephson…
Precise control of spatial spin structures, such as spin helices, is critical for advancing spintronic devices, particularly in non-volatile, low-power information storage and processing. Conventional techniques, including transient spin…
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow…
A spin current has novel linear and second-order nonlinear optical effects due to its symmetry properties. With the symmetry analysis and the eight-band microscopic calculation we have systematically investigated the interaction between a…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
Spin waves, the fundamental excitations in magnetic materials, are promising candidates for realizing low-dissipation information processing in spintronics. The ability to visualize and manipulate coherent spin-wave transport is crucial for…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established…
Femtosecond lasers interacting with Kerr nonlinear optical materials, propagate in form of filaments due to the balance of beam diffraction by self-focusing induced by the Kerr nonlinearity. Femtosecond laser filamentation is a universal…
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique,…
The behavior of spin propagation in metals in various measurement schemes is shown to be qualitatively different than a simple exponential decay - due to the backflow effect on spin diffusion in the presence of interfaces. To probe this…
Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In…