Related papers: Improving DRAM Performance, Security, and Reliabil…

The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enhance reliability, and mitigate security vulnerability. Nonetheless, DRAM…

RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics.…

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

Rowhammer is a serious security problem of contemporary dynamic random-access memory (DRAM) where reads or writes of bits can flip other bits. DRAM manufacturers add mitigations, but don't disclose details, making it difficult for customers…

Rowhammer is a critical vulnerability in dynamic random access memory (DRAM) that continues to pose a significant threat to various systems. However, we find that conventional load-based attacks are becoming highly ineffective on the most…

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips…

This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the DRAM timing parameters to reduce DRAM latency. The key…

This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…

Dynamic Random Access Memory (DRAM) is pervasive in computer systems. Cell vulnerabilities caused by unintended phenomena (forced retention failure, latency alteration, rowhammer and rowpress) lead to unintended bit flips in memory. These…

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

RowHammer vulnerabilities pose a significant threat to modern DRAM-based systems, where rapid activation of DRAM rows can induce bit-flips in neighboring rows. To mitigate this, state-of-the-art host-side RowHammer mitigations typically…

Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…

With lowering thresholds, transparently defending against Rowhammer within DRAM is challenging due to the lack of time to perform mitigation. Commercially deployed in-DRAM defenses like TRR that steal time from normal refreshes~(REF) to…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

Rowhammer is a read disturbance vulnerability in modern DRAM that causes bit-flips, compromising security and reliability. While extensively studied on Intel and AMD CPUs with DDR and LPDDR memories, its impact on GPUs using GDDR memories,…

Rowhammer is a security vulnerability that allows unauthorized attackers to induce errors within DRAM cells. To prevent fault injections from escalating to successful attacks, a widely accepted mitigation is implementing fault checks on…

The energy consumption of DRAM is a critical concern in modern computing systems. Improvements in manufacturing process technology have allowed DRAM vendors to lower the DRAM supply voltage conservatively, which reduces some of the DRAM…