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Ferroelastic materials (materials with switchable spontaneous strain) often are centrosymmetric, but their domain walls are always polar, as their internal strain gradients cause polarization via flexoelectricity. This polarization is…

Materials Science · Physics 2025-03-11 Guangming Lu , Gustau Catalan , Ekhard K. H. Salje

In this work, a hybrid integration of few-layer transition metal dichalcogenides (TMDCs) and ferroelectric polymer is designed to achieve passive control of optical properties in-situ. The electrical polarization in ferroelectric…

Strong coupling between optical and magnetic excitations could enable contactless, spatially resolved, or ultrafast interrogation and control of magnetism in two-dimensional (2D) materials and devices. The layered 2D A-type antiferromagnet…

Materials Science · Physics 2026-03-27 Jacob T. Baillie , Eden Tzanetopoulos , Rachel T. Smith , Remi Beaulac , Daniel R. Gamelin

Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial…

Materials Science · Physics 2021-11-17 Ziwen Wang , Ning Ding , Churen Gui , Shanshan Wang , Ming An , Shuai Dong

Two-dimensional (2D) multiferroic heterostructures present a promising platform for advanced spin devices by leveraging the coexisting ferromagnetic (FM) and ferroelectric (FE) orders. Through first-principles calculations and micromagnetic…

Materials Science · Physics 2024-10-14 Zheng Chen , Hongliang Hu , Wenjun Zhang , Xiaoping Wu , Ping Li , Changsheng Song

Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that…

Two-dimensional multiferroic van der Waals heterostructures provide a promising platform for the simultaneous control of distinct ferroic orders, with potential applications in magnetoelectric devices and spintronics. The practical…

Materials Science · Physics 2025-09-03 Priyanshu Raj , Sourav Mal , Rana Saha , Prasenjit Sen

The challenge of achieving ultrafast switching of electric polarization in ferroelectric materials remains unsolved, as there is no experimental evidence of such switching to date. In this study, we have developed an enhanced model that…

Materials Science · Physics 2024-05-03 Petr Zhilyaev , Kirill Brekhov , Elena Mishina , Christian Tantardini

The structural origin of Cu+ ions conductivity in Cu6PS5I single crystals is described in terms of structural phase transitions studied by X-ray diffraction, polarizing microscope and calorimetric measurements. Below the phase transition at…

Materials Science · Physics 2009-11-11 A. Gagor , A. Pietraszko , M. Drozd , M. Polomska , D. Kaynts

We show that the unexpected metallic behavior (the so-called two-dimensional metal-insulator transition) observed in low-density Silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) is controlled by a unique…

Strongly Correlated Electrons · Physics 2015-05-13 Geneviève Fleury , Xavier Waintal

Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…

The two-dimensional (2D) material Cr$_2$Ge$_2$Te$_6$ is a member of the class of insulating van der Waals magnets. Here, using high resolution angle-resolved photoemission spectroscopy in a detailed temperature dependence study, we identify…

Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However,…

We present in-situ transmission electron microscopy observations of domain wall motion in thin freestanding potassium niobate single-crystals. We observe that not all domains of a given polarization orientation are equally switchable in…

Materials Science · Physics 2007-05-23 A. Krishnan , M. M. J. Treacy , M. E. Bisher , P. Chandra , P. B. Littlewood

Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry…

Materials Science · Physics 2023-07-24 Yuwen Zhang , Chunfeng Cui , Chaoyu He , Tao Ouyang , Jin Li , Mingxing Chen , Chao Tang

Excitation of ordered quantum phases gives rise to collective modes and quasiparticles, as exemplified by spin waves and magnons emerging from magnetic order. Extending this paradigm to ferroelectric materials suggests the existence of…

Cr2Ge2Te6 is a van der Waals ferromagnet with a Curie temperature at 66 K. Here we report a swift change in the magnetic ground state upon application of small DC electric current, a giant yet anisotropic magnetoelectric effect, and a…

Recently intrinsic ferromagnetism in two-dimensional(2D) van der Waals materials was discovered [1, 2, 3]. A monolayer of Chromiun triiodide(CrI3) is ferromagnetic while a bilayer structure was reported to be anti-ferro magnetic, moreover…

Materials Science · Physics 2018-11-30 E. Suarez Morell , Andrea León , R. Hiroki Miwa , P. Vargas

Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane…

Materials Science · Physics 2021-12-13 Junlei Zhao , Xinyu Wang , Haohao Chen , Zhaofu Zhang , Mengyuan Hua

We have demonstrated that ferroelectric polarization in a spin-driven multiferroic CuFe1-xGaxO2 with x = 0.035 can be controlled by the application of uniaxial pressure. Our neutron diffraction and in-situ ferroelectric polarization…

Strongly Correlated Electrons · Physics 2015-05-28 T. Nakajima , S. Mitsuda , T. Nakamura , H. Ishii , T. Haku , Y. Honma , M. Kosaka , N. Aso , Y. Uwatoko