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Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error mechanisms. To compensate for growing error rates, both memory…

Increasing single-cell DRAM error rates have pushed DRAM manufacturers to adopt on-die error-correction coding (ECC), which operates entirely within a DRAM chip to improve factory yield. The on-die ECC function and its effects on DRAM…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

Efficient low complexity error correcting code(ECC) is considered as an effective technique for mitigation of multi-bit upset (MBU) in the configuration memory(CM)of static random access memory (SRAM) based Field Programmable Gate Array…

Inefficient data transfer between computation and memory inspired emerging processing-in-memory (PIM) technologies. Many PIM solutions enable storage and processing using memristors in a crossbar-array structure, with techniques such as…

Chip Guard is a new approach to symbol-correcting error correction codes. It can be scaled to various data burst sizes and reliability levels. A specific version for DDR5 is described. It uses the usual DDR5 configuration of 8 data chips,…

Applications in the AI and HPC fields require much memory capacity, and the amount of energy consumed by main memory of server machines is ever increasing. Energy consumption of main memory can be greatly reduced by applying approximate…

Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such…

When neural networks (NeuralNets) are implemented in hardware, their weights need to be stored in memory devices. As noise accumulates in the stored weights, the NeuralNet's performance will degrade. This paper studies how to use error…

Deep Neural Network (DNN) has achieve great success in solving a wide range of machine learning problems. Recently, they have been deployed in datacenters (potentially for business-critical or industrial applications) and safety-critical…

Modern Deep Learning (DL) workloads are increasingly deployed in safety-critical domains, such as automotive systems and hyperscale data centers, where transient hardware faults pose a serious threat to system reliability. These workloads…

Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…

In most error correction coding (ECC) frameworks, the typical error metric is the bit error rate (BER) which measures the number of bit errors. For this metric, the positions of the bits are not relevant to the decoding, and in many noise…

Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without…

We consider a neural network (NN) that may experience memory faults and computational errors. In this paper, we propose a novel real-number-based error correction code (ECC) capable of detecting and correcting both memory errors and…

Large-scale datacenters often experience memory failures, where Uncorrectable Errors (UEs) highlight critical malfunction in Dual Inline Memory Modules (DIMMs). Existing approaches primarily utilize Correctable Errors (CEs) to predict UEs,…

As memory technologies continue to shrink and memory error rates increase, the demand for stronger reliability becomes increasingly critical. Fine-grain memory replication has emerged as an appealing approach to improving memory fault…

Processing-in-memory (PIM) based on emerging devices such as memristors is more vulnerable to noise than traditional memories, due to the physical non-idealities and complex operations in analog domains. To ensure high reliability,…

Embedded RAM blocks (BRAMs) in field programmable gate arrays (FPGAs) are susceptible to single event effects (SEEs) induced by environmental factors such as cosmic rays, heavy ions, alpha particles and so on. As technology scales, the…

The scaling of high density NOR Flash memory devices with multi level cell (MLC) hits the reliability break wall because of relatively high intrinsic bit error rate (IBER). The chip maker companies offer two solutions to meet the output bit…