Related papers: Domain Wall Acceleration by Ultrafast Field Applic…
We theoretically study field-induced domain wall (DW) motion in an electrically insulating ferromagnet with hard- and easy-axis anisotropies. DWs can propagate along a dissipationless wire through spin wave emission locked into the known…
Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for DW GHz conductivity, hold promise for faster signal…
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a…
We use molecular dynamics simulations with machine-learned atomistic force fields to simulate photoexcitation of BaTiO3 by a femtosecond laser pulse whose photon energy exceeds the optical gap. We demonstrate selective displacive excitation…
We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are…
Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand,…
Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been…
We present a first-principles study of ferroelectric domain walls (FE-DWs) in multiferroic BiFeO$_3$ (BFO), a material in which the FE order parameter coexists with anti-ferrodistortive (AFD) modes involving rotations of the O$_6$…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…
Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
We study the contribution of stochastic motion of a domain wall (DW) to the dielectric AC susceptibility for low frequencies. Using the concept of waiting time distributions, which is related to the energy landscape of the DW in a…
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric…
We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent…
The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional ferroelectric materials, the typical ferroelectric switching…
Engraving trenches on the surfaces of ultrathin ferroelectric (FE) films and superlattices promises control over the orientation and direction of FE domain walls (DWs). Through exploiting the phenomenon of DW-surface trench (ST) parallel…
Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the…
Since its proposal, the idea to vastly increase data storage density with a magnetic non-volatile 3D shift-register has sustained interest in current-induced domain wall (DW) motion. So far, experimental efforts have focused on flat…