Related papers: Tuneable spin injection in high-quality graphene w…
Twisted graphene multilayers provide tunable platforms to engineer flat bands and exploit the associated strongly correlated physics. The two-dimensional nature of these systems makes them suitable for encapsulation by materials that break…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in…
Van der Waals magnets have emerged as a fertile ground for the exploration of highly tunable spin physics and spin-related technology. Two-dimensional (2D) magnons in van der Waals magnets are collective excitation of spins under strong…
Spin-polarized two-dimensional materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, we demonstrate…
High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using…
Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical…
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…
We study transmission in a system consisting of a curved graphene surface as an arc (ripple) of circle connected to two flat graphene sheets on the left and right sides. We introduce a mass term in the curved part and study the effect of a…
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we…
We propose encapsulating type-A antiferromagnetic semiconductors between graphene layers to realize a gate-tunable synthetic antiferromagnet with nonrelativistic spin splitting, enabling efficient spintronic transport via graphene. Ab…
The electrical generation of spin signals is of central interest for spintronics, where graphene stands as a relevant platform as its spin-orbit coupling (SOC) is tuned by proximity effects. Here, we propose an enhancement of spin-charge…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…
We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in…
Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are…
Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential…
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation…