Related papers: Quantum spin Hall effect in two-dimensional transi…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in…
As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…
Twist-engineering of topological phases in two-dimensional materials offers a powerful route to modulate electronic structure beyond conventional strain or chemical control. In particular, group 15 (pnictogens) monolayers such as bismuthene…
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…
We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field…
Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. While magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet…
Quantum anomalous Hall (QAH) insulator is a topological phase which exhibits chiral edge states in the absence of magnetic field. The celebrated Haldane model is the first example of QAH effect, but difficult to realize. Here, we predict…
We prove a Lieb-Schultz-Mattis theorem for the quantum spin Hall effect (QSHE) in two-dimensional $\pi$-flux models. In the presence of time reversal, $U(1)$ charge conservation and magnetic translation (with $\pi$-flux per unit cell)…
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not…
We consider the effects of interactions on the edges of ``double" quantum spin Hall insulators (DQSHIs), motivated by recent experiments on moir\'e twisted metal dichalcogenides. Without interactions, a DQSHI can be understood as two copies…
Recent experiments have reported a lot of spectacular transport properties in topological materials, such as quantum oscillations and three-dimensional (3D) quantum Hall effect (QHE) in ZrTe$_5$. In this paper, by using a strong topological…
Two-dimensional tungsten-based transition metal dichalcogenides (TMDCs), $MX_{2}$ ($M$: W, Mo; $X$: S, Se, Te) monolayers (MLs) with a $1T'$ structure, serve as significant-gap quantum spin Hall insulators. However, due to the…
We formulate a generalized Chalker--Coddington network model that describes the effect of nuclear spins on the two-dimensional electron gas in the quantum Hall regime. We find exact analytical expression for the transmission coefficient of…
Two-dimensional stanene is a promising candidate material for realizing room-temperature quantum spin Hall (QSH) effect. Monolayer stanene has recently been fabricated by molecular beam epitaxy, but shows metallic features on…
One of the most exciting properties of two dimensional materials is their sensitivity to external tuning of the electronic properties, for example via electric field or strain. Recently discovered analogues of phosphorene, group-IV…
Non-interacting topological states of matter can be realized in band insulators with intrinsic spin-orbital couplings as a result of the nontrivial band topology. In recent years, the possibility of realizing novel interaction-driven…
A Quantum Spin-Hall Insulator (QSHI) is implemented into a simple mass-spring Kagome lattice. The transition from the trivial state to the topological one is described by an invariant Chern number function of a contrast parameter. The band…
A quantum spin hall insulator(QSHI) is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T'-WTe2 exhibits this quantized edge conductance in transport…
Achieving combination of spin and valley polarized states with topological insulating phase is pregnant to promote the fantastic integration of topological physics, spintronics and valleytronics. In this work, a spin-valley-coupled quantum…