Related papers: Strain-controlled Domain Wall injection into nanow…
Time-resolved pump-probe soft X-ray ptychography and Scanning Transmission X-ray Microscopy (STXM) were employed to study the magnetic domain wall dynamics in microstructures of permalloy (Ni$_{81}$Fe$_{19}$; Py) with a weak growth-induced…
Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand,…
Stripe domains are studied in perpendicular magnetic anisotropy films nanostructured with a periodic thickness modulation that induces the lateral modulation of both stripe periods and inplane magnetization. The resulting system is the 2D…
Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…
The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of the interfacial Dzyaloshinskii-Moriya interaction…
The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
Magnetic lateral multilayers have been fabricated on weak perpendicular magnetic anisotropy amorphous Nd-Co films in order to perform a systematic study on the conditions for controlled nucleation of topological defects within their…
We consider the dynamics of polarization of a single domain wall in a magnetic nanowire, which is strongly pinned by impurities. In this case the equation of motion for the polarization parameter does not include any other dynamical…
Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be…
Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the…
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by…
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…
We investigate magnetic domain walls in a single fcc Mn layer on Re(0001) employing spin-polarized STM, atom manipulation, and spin dynamics simulations. The low symmetry of the row-wise antiferromagnetic (1Q) state leads to a new type of…
The direct bonding process of a diamond-on-insulator (DOI) substrate enables monolithic integration of diamond photonic structures for quantum computing by improving photon collection efficiency and entanglement generation rate between…
This work is focused on determining the electrical resistance, which induced by single domain wall in magnetic nanowire with a negligible defect. The provided model covers a wide range of nanowire's diameters. The obtained result…
We investigate the formation of stable one-dimensional N\'eel walls in a ferromagnetic slab with finite thickness and finite width. Taking into account the dipolar, the exchange and the uniaxial anisotropic crystalline field interactions,…
We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls…
Rectangular nanowires may have domain walls nucleated and moved through them to realize many devices. It has been shown that at a particular width and thickness of a nanowire with perpendicular anisotropy, there is a switch from the domain…
Conductive domain walls (CDWs) in insulating ferroelectrics have recently attracted considerable attention due to their unique topological, optical, and electronic properties, and offer potential applications such as in memory devices or…