Related papers: Distinguishing spin pumping from spin rectificatio…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the…
The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…
Spin pumping is a technique widely used to generate the pure spin current and characterize the spin-charge conversion in various systems. The reversing sign of the symmetric Lorentzian charge current with respect to opposite magnetic field…
Altermagnetic materials, especially RuO$_2$, have recently attracted considerable attention for their unique magnetic properties and energy-efficient spintronic applications. However, recent experimental studies have reported highly…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a…
We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin…
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices.…
Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance (FMR) over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents…
The spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical description. This makes it difficult to differentiate the SHE from…
The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now…
Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin…
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
In this study, by engineering the molecular structure, we optimize the spin Hall conductivity and the spin Hall angle in organics by more than five and three orders of magnitude, respectively. We identify two important characteristics of…
We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic (AF) materials via orbital pumping experiments. Conducting spin and orbital pumping experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly observe…
By viewing current in the detecting lead of a spintronic device as being an ensemble of flowing spins corresponding to a mixed quantum state, where each spin itself is generally described by an improper mixture generated during the…
Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed,…
The transverse current (j_H) due to anomalous Hall effect (AHE) is usually assumed to be perpendicular to the magnetization (m) in ferromagnetic materials, which governs the experiments in spintronics. Generally, this assumption is derived…