Related papers: Spin-orbit torque: Moving towards two-dimensional …
The unveiling of 2D van der Waals magnetism in 2017 ignited a surge of interest in low-dimensional magnetism. With dimensions reduced, research has delved into facile electric control of 2D magnetism, high-quality heterostructure design,…
Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque…
Two dimensional (2D) magnets have emerged as a compelling platform for spin based nanoelectronics, enabling atomic scale control of magnetic order, interfaces, quantum geometry, and symmetry. Here, we highlight recent advances in 2D…
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the…
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…
Recent observations of large unconventional spin-orbit torques in van der Waals (vdW) materials are driving intense interest for energy-efficient spintronic applications. A key limitation of ferromagnet (FM)/vdW heterostructures is their…
The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW…
Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…
The discovery of van der Waals (vdW) magnetic materials exhibiting non-trivial and tunable magnetic interactions can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Controlling magnetism in low dimensional materials is essential for designing devices that have feature sizes comparable to several critical length scales that exploit functional spin textures, allowing the realization of low-power…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
Twisted van der Waals (vdW) materials have emerged as a promising platform for exploring exotic quantum phenomena and engineering novel material properties in two dimensions, potentially revolutionizing developments in spintronics. This…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…