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Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and…
Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielectric breakdown has not been discussed. Here, we report an…
Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these…
Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic…
Monolayer MoTe2 exhibits a variety of derivative structural phases and associated novel electronic properties that enable a wealth of potential applications in future electronic and optoelectronic devices. However, a comprehensive study…
The integration of membranes into optical resonators plays a key role in a variety of applications, including optomechanics. If such membranes host atom-like systems, ideally with access to spin states, new roads in quantum photonics and…
Carbon's versatility allows it to form diverse structures with unique properties, driven by its moderate electronegativity, small ionic radius, and ability to adopt \textit{sp}, \textit{sp\textsuperscript{2}}, and…
A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials…
Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative new science that may be harnessed for novel device technologies. These materials are commonly…
Graphene is a promising material for the development of applications in nanoelectronic devices, but the lack of a band gap necessitates the search for ways to tune its electronic properties. In addition to doping, defects, and nanoribbons,…
Boron nitride (BN) is a material with outstanding technological promise because of its exceptional thermochemical stability, structural, electronic and thermal conductivity properties, and extreme hardness. Yet, the relative thermodynamic…
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…
Topological matter in 3D is characterized by the presence of a topological BF term in its long-distance effective action. We show that, in 3D, there is another marginal term that must be added to the action in order to fully determine the…
Two-dimensional (2D) layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductor and provided the key insights to understand the phonon-electron interaction and pairing mechanism.…
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the…
Rational design of novel two-dimensional (2D) electrode materials with high capacity is crucial for the further development of Li-ion and Na-ion batteries. Herein, based on first-principles calculations, we systemically investigate Li and…
We systematically evaluate the prospects of a novel 2D nanomaterial, phosphorene, as anode for Na-ion batteries. Using first-principles calculations, we determine the Na adsorption energy, specific capacity and Na diffusion barriers on…
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality…
While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to…