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Non-volatile memory (NVM) is a class of promising scalable memory technologies that can potentially offer higher capacity than DRAM at the same cost point. Unfortunately, the access latency and energy of NVM is often higher than those of…

The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional…

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an…

This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…

In recent years, graph-processing has become an essential class of workloads with applications in a rapidly growing number of fields. Graph-processing typically uses large input sets, often in multi-gigabyte scale, and data-dependent graph…

We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…

Dataflow-based CNN accelerators on FPGAs achieve low latency and high throughput by mapping computations of each layer directly to corresponding hardware units. However, layers such as pooling and strided convolutions reduce the data at…

Cause-effect chains, as a widely used modeling method in real-time embedded systems, are extensively applied in various safety-critical domains. End-to-end latency, as a key real-time attribute of cause-effect chains, is crucial in many…

We propose a lightweight scheme where the formation of a data block is changed in such a way that it can tolerate soft errors significantly better than the baseline. The key insight behind our work is that CNN weights are normalized between…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

Real-time and cyber-physical systems need to interact with and respond to their physical environment in a predictable time. While multicore platforms provide incredible computational power and throughput, they also introduce new sources of…

One of the major barriers that CMOS devices face at nanometer scale is increasing parameter variation due to manufacturing imperfections. Process variations severely inhibit the reliable operation of circuits, as the operational frequency…

The Latent heat storage technology is being used worldwide to bridge the gap between supply and demand of energy. The material store energy during the charging process (melting) and releases energy during the discharging process…

Byte-addressable non-volatile main memory (NVM) demands transactional mechanisms to access and manipulate data on NVM atomically. Those transaction mechanisms often employ a logging mechanism (undo logging or redo logging). However, the…

LLM agents today communicate via text, which incurs considerable latency and information loss due to the need to autoregressively decode the sharer model's state and encode at the receiver model. Recent work such as Cache-to-Cache (C2C; Fu…

KV cache quantization can improve Large Language Models (LLMs) inference throughput and latency in long contexts and large batch-size scenarios while preserving LLMs effectiveness. However, current methods have three unsolved issues:…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…