Related papers: Detection of single W-centers in silicon
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G…
We identify the exact microscopic structure of the G photoluminescence center in silicon by first principles calculations with including a self-consistent many-body perturbation method, which is a telecommunication wavelength single photon…
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band,…
Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into…
Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…
Defect centers are promising candidates for waveguide-integrated silicon light sources. We demonstrate microresonator- and waveguide-coupled photoluminescence from silicon W~centers. Microphotoluminescence measurements indicate wavelengths…
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate…
We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystalline matrix. Using high-resolution spin spectroscopy, we reveal…
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with…
Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies…
Spin-to-photon interfaces from defects in silicon hold great promise towards realizing quantum repeaters with the combination of advanced semiconductor and photonics technologies. Recently, controlled creation and erasure of simple carbon…
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical…
Atomic defects in solid-state materials are promising candidates for quantum interconnect and networking applications. Recently, a series of atomic defects have been identified in the silicon platform, where scalable device integration can…
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer…
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have…
We identify the W center in self-implanted crystalline Si with the three-membered self-interstitial cluster I_3 on the basis of first-principles density-functional-theory calculations matching all the known experimental signatures of the…
We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a…