Related papers: Pressure induced electronic transitions in Samariu…
The photo-induced band structure variation of a rare-earth-based semiconductor, samarium monosulfide (SmS), was investigated using high-harmonic-generation laser-based time-resolved photoelectron spectroscopy. A nonlinear photo-induced band…
A strongly-correlated insulator, samarium mono-sulfide (SmS), presents not only the pressure-induced insulator-to-metal transition (IMT) with the color change from black to golden-yellow but also current-induced IMT (CIMT) with negative…
We report the pressure-dependent optical reflectivity spectra of a strongly correlated insulator, samarium monosulfide (SmS), in the far- and middle-infrared regions to investigate the origin of the pressure-induced phase transition from…
Despite the significant attention it has garnered over the last thirty years, the paradigmatic material strontium ruthenate remains the focus of critical questions regarding strongly correlated materials. As an alternative platform to…
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD)…
We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…
We report on the study of the response to high pressures of the electronic and magnetic properties of several Sm-based compounds, which span at ambient pressure the whole range of stable charge states between the divalent and the trivalent.…
Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…
A review is given of pressure induced valence transitions in f-electron systems calculated with the self-interaction corrected local spin density (SIC-LSD) approximation. These calculations show that the SIC-LSD is able to describe valence…
Valence instability is a key ingredient of the unusual properties of f electron materials, yet a clear understanding is lacking as it involves a complex interplay between f electrons and conduc- tion states. Here we propose a unified…
Insulator-metal transition is investigated self-consistently on the frustrated Shastry-Sutherland lattice in the framework of Slave-Boson mean-field theory. Due to the presence of quasi-flat band structure characteristic, the system…
Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were…
The electronic structures of SmX (X=N, P, As, Sb, Bi, O, S, Se, Te, Po)compounds are calculated using the self-interaction corrected local-spin density approximation. The Sm ion is described with either five or six localized $f$-electrons…
Exotic quantum phenomena often emerge near an electronic delocalization transition (EDT) from an antiferromagnetic insulating phase to a strongly correlated metallic state under pressure. We report the pressure-induced structural and…
We present a simple, but very realistic, model for a description of pressure induced valence and metal-insulator transitions in mixed valence systems. It is based on the extended Falicov-Kimball model and the supposition that the key…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
Ab initio calculations predict a metal-insulator transition at zero temperature to occur in La$_4$Ni$_3$O$_8$ at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at…
The electronic structure of Samarium (Sm) was calculated using the density functional theory combined with the single-site dynamical mean-field theory. In this work, we investigated the electronic properties of {\alpha}, \b{eta} and…
The electronic structure changes of SmS surfaces under potassium (K) doping are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES…
Silicon telluride (Si2Te3) is a two-dimensional semiconductor with unique structural properties due to the size contrast between Si and Te atoms. A recent experiment shows that the material turns metallic under hydrostatic pressure, while…