Related papers: A "Janus" double sided mid-IR photodetector based …
We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Quantum-enhanced optical systems operating within the 2- to 2.5-$\mu$m spectral region have the potential to revolutionize emerging applications in communications, sensing, and metrology. However, to date, sources of entangled photons have…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
Integrated photonics provides a route both to miniaturize quantum key distribution (QKD) devices and to enhance their performance. A key element for achieving discrete-variable QKD is a single-photon detector. It is highly desirable to…
Mid-infrared photodetectors are susceptible to background noise since every object in the surroundings emits thermal radiation from different directions. To reduce this background noise and enhance signal-to-noise ratio of mid-infrared…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective…
This study introduces a dual-band plasmonic absorber designed for simultaneous sensing applications in the near-infrared (NIR) and mid-infrared (MIR) regions. The absorber, composed of silver nanostructures on a metal plate with a…
The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for…
We present JHK near-infrared (NIR) spectroscopy of 25 candidate Type II quasars selected from the Sloan Digital Sky Survey, using Triplespec on the Apache Point Observatory 3.5m telescope, FIRE at the Magellan/Baade 6.5m telescope, and…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…
Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Light in the mid-infrared (mid-IR) spans wavelengths from 3-8 $\mu$m and is important to many applications such as gas sensing and thermal imaging. Due to materials challenges, there is currently a lack of mid-IR reconfigurable optical…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…
State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds.…
Long-wave infrared (LWIR, 8-14 um) photonics is a rapidly growing research field within the mid-IR with applications in molecular spectroscopy and optical free-space communication. LWIR-applications are often addressed using rather bulky…