Related papers: Orbital contributions in the element-resolved vale…
Three dimensional (3D) third-order topological insulators (TIs) have zero-dimensional (0D) corner states, which are three dimensions lower than bulk. Here we investigate the third-order TIs on breathing pyrochlore lattices with p-orbital…
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband…
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and…
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via…
Spontaneously broken symmetry in the ground state of Bi-based topological materials can lead to promising Topological superconductors, such as Cu-Bi2Se3, Sr-Bi2Se3 and Nb-Bi2Se3. In recent studies, coexistence of multiple Fermi surface…
We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the…
The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals…
A hybrid orbital model for the topological insulator Bi2Se3 is proposed and compared to that of graphene. The existence of a pi-bond trimer on the Se1 layer at the van der Waals gap and on the surface is thought to be responsible for the…
Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this…
The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power…
In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band…
Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI…
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with…
The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is…
Topological insulators in the Bi$_2$Se$_3$ family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band…
Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric…
The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological…
We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…
Topological surface states of Bi-doped PbSb2Te4 [Pb(Bi0.20Sb0.80)2Te4] are investigated through analyses of quasiparticle interference (QPI) patterns observed by scanning tunneling microscopy. Interpretation of the experimental QPI patterns…
Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band…