Related papers: Anatomy of Type-X Spin-Orbit Torque Switching
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$_1$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dampinglike spin-orbit torque (DL-SOT) acting upon adjacent…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in…
We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…