Related papers: Robust all-electrical topological valley filtering…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and…
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…
Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
Pseudo-spin and valley degrees of freedom (DOFs) engineered in photonic analogues of topological insulators (TI) provide potential approaches to optical encoding and robust signal transport. Here we observe a ballistic edge state whose…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…
Progress on two-dimensional materials has shown that valleys, as energy extrema in a hexagonal first Brillouin zone, provides a new degree of freedom for information manipulation. Then valley Hall topological insulators supporting…
The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…
Topologically protected zero-line modes appear at the interface between two regions of the monolayer graphene in quantum anomalous Hall phase with different Chern number. In the presence of staggered sublattice potential, the band gaps of…
We propose a realization of pure spin currents and perfect valley filter based on a quantum anomalous Hall insulator, around which edge states with up-spin and down-spin circulate. By applying staggered sublattice potential on the strips…
We propose a realization of perfect valley filters based on the chiral domain-wall channels between a quantum anomalous Hall insulator and a quantum valley Hall insulator. Uniquely, all these channels reside in the same valley and propagate…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
We study spin and valley-dependent transport properties in an n-p-n junction of 8-pmmn borophene monolayer. An external gate voltage and exchange magnetic field, induced by the proximity effect of a ferromagnetic insulator, are applied to…
Altermagnets, a novel class of collinear magnetic materials, exhibit unique spin-split band structures, yet topological insulating states in intrinsic altermagnetic systems are rare. Here, we identify monolayer Fe$_2X_2$O ($X$ = Cl, Br, I)…