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Related papers: A CMOS-compatible morphotropic phase boundary

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Low dimensional structures comprised of ferroelectric (FE) PbTiO$_3$ (PTO) and quantum paraelectric SrTiO$_3$ (STO) are hosts to complex polarization textures such as polar waves, flux-closure domains and polar skyrmion phases. Density…

Materials Science · Physics 2022-02-16 Jack S. Baker , David R. Bowler

Using density-functional theory with ultrasoft pseudopotentials, we previously investigated the structural and electronic properties of the low-pressure (cubic, tetragonal, and monoclinic) phases of ZrO2 and HfO2, in order to elucidate…

Materials Science · Physics 2007-05-23 Xinyuan Zhao , David Vanderbilt

We report on the evolution of the magnetic structure of BiFeO3 thin films grown on SrTiO3 substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic…

Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…

Materials Science · Physics 2019-08-28 Masatake Tsuji , Kota Hanzawa , Hiroyuki Kinjo , Hidenori Hiramatsu , Hideo Hosono

We report neutron inelastic scattering on single crystal 0.68Pb(Mg1/3Nb2/3O3)-0.32PbTiO3 (PMN-0.32PT), a relaxor ferroelectric material that lies within the compositional range of the morphotropic phase boundary (MPB). Data were obtained…

Materials Science · Physics 2009-11-13 Hu Cao , Chris Stock , Guangyong Xu , Peter M. Gehring , Jiefang Li , Dwight Viehland

The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples…

Materials Science · Physics 2015-06-11 R. Karmakar , S. K. Neogi , Aritra Banerjee , S. Bandyopadhyay

Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between…

Materials Science · Physics 2014-10-22 Sebastian E. Reyes-Lillo , Kevin F. Garrity , Karin M. Rabe

Temperature-dependent dielectric permittivity of lead-free (LixNa1-x)NbO3 for nominal x = 0.04-0.20, prepared by solid state reaction followed by sintering, was studied to resolve often debated issue pertaining to exactness of morphotropic…

Materials Science · Physics 2014-01-15 S. Mitra , A. R. Kulkarni , Om. Prakash

Multiferroic oxides, such as BiFeO3, have garnered significant attention due to their coupled ferroelectric, magnetic, and elastic properties, offering exciting opportunities for multifunctional device applications. Controlling phase…

Materials Science · Physics 2025-02-19 Fei Sun , Chao Chen , Deyang Chen , Minghui Qin , Xubing Lu , Xingsen Gao , Christopher T Nelson , Jun-Ming Liu

Physically parallel to ferroelectric morphotropic phase boundary, a phase boundary separating two ferromagnetic phase of different crystallographic symmetries was found in TbxDy1-xCo2. High-resolution synchrotron XRD has been carried out to…

Materials Science · Physics 2013-04-26 Dongyan Zhang , Sen Yang , Pangpang Wang , Yu Wang , Jieqiong Wang , Xiaoping Song

K$_{0.5}$Na$_{0.5}$NbO$_3$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O$_3$, reproducible processing of high-quality and time-stable…

After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic…

Materials Science · Physics 2024-09-11 Deepak Kumar

The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is…

Materials Science · Physics 2023-09-11 Ryan Van Haren , Nessa Hald , David Lederman

HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…

Mesoscale and Nanoscale Physics · Physics 2024-03-11 Prabhat Kumar , Michael Hoffmann , Andrew Nonaka , Sayeef Salahuddin , Zhi Yao

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands…

We report a more than 10-fold enhancement of the piezoelectric coefficient $d_{33}$ of polycrystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) films when interfacing them with ferroelectric PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT). Piezo-response force…

Materials Science · Physics 2018-06-12 Jingfeng Song , Zhiyong Xiao , Bo Chen , Spencer Prockish , Xuegang Chen , Jinsong Huang , Xia Hong

In view of their immensely intriguing properties, two dimensional materials are being intensely researched in search of novel phenomena and diverse application interests, however, studies on the realization of nanocomposites in the…

The origin of the very large piezoelectric response observed in the vicinity of the morphotropic phase boundary (MPB) in perovskite lead zirconate titanate and related systems has been under intensive studies. Polarization rotation ideas…

Materials Science · Physics 2009-11-13 Johannes Frantti , Yukari Fujioka , Risto M. Nieminen

Control over crystallographic orientation in metal-organic framework (MOF) thin films is crucial for exploiting their anisotropic properties in sensing, catalysis, and separation. Achieving reproducible, highly oriented films remains…

Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the…