Related papers: Anomalous valley Hall effect in antiferromagnetic …
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
Achieving external control over the anomalous valley Hall (AVH) effect is essential for advancing valleytronic applications. However, many of the existing approaches suffer from limitations such as irreversibility or volatility. In this…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…
The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and…
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or…
Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here,…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
We study the anomalous Hall effect in monolayers of transition-metal dichalcogenides 2H-$MX_2$ ($M$=Mo, W, and $X$=S, Se, Te) under a proximity effect of ferromagnetic substrate. If a proximity-induced exchange field is introduced, the…
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…
The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to…
The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for…
The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of the valley degree of freedom in materials. A general strategy for its realization and manipulation is crucial for valleytronics. Here, by…
Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very…
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…