Related papers: Variability of electron and hole spin qubits due t…
Electron shuttling is emerging as a key enabler of scalable silicon spin-qubit quantum computing, but fidelities are limited by atomistic disorder. We introduce a multiscale simulation framework combining time-dependent finite-element…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…
Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures…
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…
Fast spin manipulation and long spin coherence time in quantum dots are essential features for high fidelity semiconductor spin qubits. However, generally it has not been well established how to optimize these two properties simultaneously,…
Spin qubits have emerged as a leading platform for quantum information processing due to their long coherence times, small footprint, and compatibility with the existing semiconductor industry. We first provide an introduction to the…
Across leading qubit platforms, a common trade-off persists: increasing coherence comes at the cost of operational speed, reflecting the notion that protecting a qubit from its noisy surroundings also limits control over it. This…
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…
We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley…
We consider a model for the two-dimensional electron gas formed at the interface of oxide heterostructures, which includes a Rashba spin-orbit coupling proportional to the electric field perpendicular to the interface. Based on the standard…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control.…
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long…
Strong, direct Rashba spin-orbit coupling in Si, Ge, and the Ge/Si core/shell nanowire quantum dot (QD) allows for all electrical manipulation of the hole spin qubit. Motivated by this fact, we analyze different fabrication-dependent…
Contrary to the well known spin qubits, rare-earth qubits are characterized by a strong influence of crystal field due to large spin-orbit coupling. At low temperature and in the presence of resonance microwaves, it is the magnetic moment…
We present a flexible microscopic modeling framework for flopping-mode spin qubits that captures the spatial structure of the double-well confinement and magnetic-field-gradient profile beyond conventional low-energy approximations. Our…