Related papers: Quantum oscillations in 2D insulators induced by g…
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance…
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…
The rich and electrostatically tunable phase diagram exhibited by moir\'e materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and…
We report on theoretical studies of recently discovered microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In the same results, resistance presents a peculiar shape which appears to…
The topological insulators have a gap in the bulk but extended states at the edge that can carry current. We study a geometry in which such edge states will manifest themselves through periodic oscillations in the magnetoconductance of a…
Magnetic oscillations in strongly correlated insulating systems have garnered interest due to oscillations seemingly originating from the bulk, despite an anticipated gapped spectrum. We use the large-$N$ mean-field theory to study the…
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…
We study the spin dynamics of a ferromagnetic insulator on which graphene is placed. We show that the Gilbert damping is enhanced by the proximity exchange coupling at the interface. The modulation of the Gilbert damping constant is…
Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for…
We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
In strongly correlated materials, quasiparticle excitations can carry fractional quantum numbers. An intriguing possibility is the formation of fractionalized, charge-neutral fermions, e.g., spinons and fermionic excitons, that result in…
Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…
The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime.…
We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…
Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the…
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven…
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…