Related papers: Towards GaAs Thin-Film Tracking Detectors
Kinetic inductance in thin film superconductors has been used as the basis for low-temperature, low-noise photon detectors. In particular thin films such as NbTiN, TiN, NbN, the kinetic inductance effect is strongly non-linear in the…
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to…
During 2014 the second experimental area EAR2 was completed at the n-TOF neutron beam facility at CERN. As the neutrons are produced via spallation, by means of a high-intensity 20 GeV pulsed proton beam impinging on a thick target, the…
The thick GEM (THGEM) [1] is an "expanded" GEM, economically produced in the PCB industry by simple drilling and etching in G-10 or other insulating materials (fig. 1). Similar to GEM, its operation is based on electron gas avalanche…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…
In order to take full advantage of the U.S. Department of Energy's billion-dollar investments into the next-generation research infrastructure (e.g., exascale, light sources, colliders), advances are required not only in detector technology…
Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
Low Gain Avalanche Detectors (LGADs) are fast silicon sensors with potential for high-resolution proton beam monitoring. In this work, we investigated their response in a 60 MeV proton beam from an AIC-144 cyclotron. Several features of the…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron…
Muon Tomography based on the measurement of multiple scattering of atmospheric cosmic ray muons in matter is a promising technique for detecting heavily shielded high-Z radioactive materials (U, Pu) in cargo or vehicles. The technique uses…
Integrated photonic devices operating via optical nonlinearities offer a powerful solution for all optical information processing, yielding processing speeds that are well beyond that of electronic processing as well as providing the added…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
The Soft Gamma-ray Detector (SGD) on board the NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view (FOV), which utilizes Compton kinematics to enhance its background rejection…
Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved…
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…
A radiation detector based on plasma display panel technology, which is the principal component of plasma television displays is presented. Plasma Panel Sensor (PPS) technology is a variant of micropattern gas radiation detectors. The PPS…