Related papers: Ultra-Thin All-Epitaxial Plasmonic Detectors
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures.…
Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent…
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a…
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the…
An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of…
Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still…
This letter introduces a novel class of miniaturized, uncooled, and ultra-fast infrared (IR) resonant thermal detectors (RTDs) based on 30%-doped Aluminum Scandium Nitride (AlScN) nanoplates. Exploiting high electromechanical coupling, good…
High-speed thermal imaging in the long-wave infrared (LWIR) is critical for applications from autonomous navigation to medical screening, yet existing uncooled detectors are fundamentally constrained. Resistive bolometers are limited by…
Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room…
Plasmonic color filters employing a single optically-thick nanostructured metal layer have recently generated considerable interest as an alternative to colorant-based color filtering technologies, due to their reliability, ease of…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
With a rapidly growing amount of data generated and processed, a search for more efficient components and architectures such as neuromorphic computing that are able to perform a more and more complex operations in more efficient way…
Thermal detectors are a cornerstone of infrared (IR) and terahertz (THz) technology due to their broad spectral range. These detectors call for suitable broad spectral absorbers with minimalthermal mass. Often this is realized by plasmonic…
Plasmon excitations in metallic nanostructures can decay directly into dynamic electron-hole pairs (EHPs), exploitable for photocurrent generation. This approach has extensively been employed to develop nanoplasmonic light-sensing devices…
We design a polarization-sensitive resonator for use in midinfrared photodetectors, utilizing a photonic crystal cavity and a single or double-metal plasmonic waveguide to achieve enhanced detector efficiency due to superior optical…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…
We present the model of an ultrasensitive mid-infrared (mid-IR) photodetector operating in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) domains consisting of a hybrid heterostructure made of nanopatterned graphene…
We propose an on-chip CMOS compatible graphene plasmonic photodetector based on the photo-thermoelectric effect (PTE) that occurs across an entire homogeneous graphene channel. The proposed photodetector incorporates the long-range…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…