English
Related papers

Related papers: Engineering optically active defects in hexagonal …

200 papers

We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with…

Materials Science · Physics 2017-02-07 S. Matt Gilbert , Gabriel Dunn , Thang Pham , Brian Shevitski , Edgar Dimitrov , Shaul Aloni , Alex Zettl

Hexagonal boron nitride (h-BN) is a 2D, wide band-gap semiconductor that has recently been shown to display bright room-temperature emission in the visible region, sparking immense interest in the material for use in quantum applications.…

Hexagonal boron nitride (hBN) has been experimentally shown to exhibit room-temperature single-photon emission. This emission is attributed to defect states in the wide band-gap of hBN, which allow new optical transitions between these…

Materials Science · Physics 2024-11-15 Reyhan Mehta , Anshuman Kumar

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room…

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in…

Liquids confined down to the atomic scale can show radically new properties. However, only indirect and ensemble measurements operate in such extreme confinement, calling for novel optical approaches enabling direct imaging at the molecular…

Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy…

Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a demand for…

Mesoscale and Nanoscale Physics · Physics 2018-04-04 Jiandong Feng , Hendrik Deschout , Sabina Caneva , Stephan Hofmann , Ivor Lončarić , Predrag Lazić , Aleksandra Radenovic

Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like…

Coherent quantum emitters are a central resource for advanced quantum technologies. Hexagonal boron nitride (hBN) hosts a range of quantum emitters that can be engineered using techniques such as high-temperature annealing, optical doping,…

Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as…

Optics · Physics 2021-06-08 Yanan Wang , Jaesung Lee , Jesse Berezovsky , Philip X. -L. Feng

Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines,…

Development of scalable quantum photonic technologies requires on-chip integration of components such as photonic crystal cavities and waveguides with nonclassical light sources. Recently, hexagonal boron nitride (hBN) has emerged as a…

Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron…

Applied Physics · Physics 2024-04-16 Sergei Nedić , Karin Yamamura , Angus Gale , Igor Aharonovich , Milos Toth

Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…

Applied Physics · Physics 2024-09-16 Suk Hyun Kim , Kyeong Ho Park , Young Gie Lee , Seong Jun Kang , Yongsup Park , Young Duck Kim

Color centers in hexagonal boron nitride (hBN) have become an intensively researched system due to their potential applications in quantum technologies. There has been a large variety of defects being fabricated, yet, for many of them, the…

Quantum Physics · Physics 2024-08-02 Chanaprom Cholsuk , Ashkan Zand , Asli Cakan , Tobias Vogl

Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…

Materials Science · Physics 2016-09-28 L. J. Martínez , T. Pelini , V. Waselowski , J. R. Maze , B. Gil , G. Cassabois , V. Jacques

Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and…

Mesoscale and Nanoscale Physics · Physics 2023-07-21 Song Li , Anton Pershin , Pei Li , Adam Gali

Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable, and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms…

Optically active spin defects in wide-bandgap materials have many potential applications in quantum information and quantum sensing. Spin defects in two-dimensional layered van der Waals materials are just emerging to be investigated. Here…