Related papers: Electric Field Modulation of Spin Transport
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes…
While microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in…
Manipulating the spin polarization of electron beams using light is highly desirable but exceedingly challenging, as the approaches proposed in previous studies using free-space light usually require enormous laser intensities. Here, we…
Inelastic transport through a single magnetic molecule weakly coupled to metallic leads is studied theoretically. We consider dynamical processes that are relevant for writing, storing, and reading spin information in molecular memory…
The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the…
We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
In this article we extend the currently established diffusion theory of spin-dependent electrical conduction by including spin-dependent thermoelectricity and thermal transport. Using this theory, we propose new experiments aimed at…
In the systems ferromagnet/superconductor ([Fe, Ni]/In), the temperature dependent transport has been investigated within the temperature range including superconducting transition temperature for Indium. It has been found that when Indium…
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a…
Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin…
Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the…
We discuss the influence of electrical effects on spin transport, and in particular the propagation and relaxation of spin polarized electrons in the presence of inhomogeneous electric fields. We show that the spin relaxation length…
Electron-magnon coupling at the interface between a normal metal and a magnetically ordered insulator modifies the electrical conductivity of the normal metal, an effect known as spin-Hall magnetoresistance. It can also facilitate…
We propose a mechanism of angular momentum conversion from optical transverse spin in surface plasmon polaritons (SPPs) to conduction electron spin. Free electrons in the metal follow the transversally spinning electric field of SPP, and…
Parallel thermal conduction along stochastic magnetic field lines may be reduced because the heat conducting electrons become trapped and detrapped between regions of strong magnetic field (magnetic mirrors). The problem reduces to a simple…
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…