Related papers: Hafnia-based Double Layer Ferroelectric Tunnel Jun…
The past two decades have seen an explosion of work on Josephson junctions containing ferromagnetic materials. Such junctions are under consideration for applications in digital superconducting logic and memory. In the presence of the…
Single flux quantum (SFQ) circuits form a natural neuromorphic technology with SFQ pulses and superconducting transmission lines simulating action potentials and axons, respectively. Here we present a new component, magnetic Josephson…
Superconducting qubits have motivated the exploration of Josephson-junction technologies beyond quantum computing, with emerging applications in low-energy photon and phonon detection for astrophysics and dark matter searches. Achieving…
Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…
The current work reports an efficient deep neural network (DNN) accelerator where synaptic weight elements are controlled by ferroelectric domain dynamics. An integrated device-to-algorithm framework for benchmarking novel synaptic devices…
Spintronics exhibits significant potential in neuromorphic computing system with high speed, high integration density, and low dissipation. In this letter, we propose an ultralow-dissipation spintronic memristor composed of a synthetic…
Spintronic artificial neurons are intriguing building blocks for energy efficient Neuromorphic Computing (NC). Nevertheless, most contemporary implementations rely on symmetry breaking external in plane magnetic fields (H_X) for neuron…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…
Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and…
Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is…
In an effort to compete with the brain's efficiency at processing information, neuromorphic hardware combines artificial synapses and neurons using mixed-signal circuits and emerging memories. In ferroelectric resistive weights, the…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the…
Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied…
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical…
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…