Related papers: Singular angular magnetoresistance and sharp reson…
The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…
We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5x10^18 cm^-3, which is a topological insulator with residual bulk carriers. We show that the…
We report detailed study of angular-dependent magnetoresistance (AMR) with tilting angel $\theta$ from $c$-axis ranging from 0$^\circ$ to 360$^\circ$ on a high-quality FeSe single crystal. A pronounced AMR with twofold symmetry is observed,…
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic…
The magnetoresistance (MR) of SrTiO$_3$ is theoretically investigated based on the Boltzmann equation by considering its detailed band structure. The formula for MR proposed by Mackey and Sybert is extended to be applicable to a system with…
Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3 (STO) have been created using Ar+-irradiation with fully metallic behavior and low-temperature-mobility as large as 5500 cm2V-1s-1, 1300 cm2V-1s-1 and 8600 cm2V-1s-1…
Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we…
We report measurements of the c-axis angular-dependent magnetoresistance (AMR) for a Na$_{0.48}$CoO$_{2}$ single crystal, with a magnetic field of 10 T rotating within Co-O planes. Below the metal-insulator transition temperature induced by…
High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…
Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…
Though the Fermi surface of surface states of a 3D topological insulator (TI) has zero magnetization, an arbitrary segment of the full Fermi surface has a unique magnetic moment consistent with the type of spin-momentum locking in hand. We…
We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO…
The shape of the Fermi surface influences many physical phenomena in materials and a growing interest in how the spin-dependent properties are related to the fermiology of crystals has surged. Recently, a novel current-dependent nonlinear…
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…
(BEDT-TTF)$_2$MHg(SCN)$_4$[M:K,Rb,Tl] shows typical two-dimensional angular dependent magnetoresistance oscillation (ADMRO) at high temperature (T$>$8K), but at lower temperature it shows anomalously large magnetoresistance, and the ADMRO…
Many of the most interesting and technologically important electronic materials discovered in the past two decades have two common features: a layered crystal structure and strong interactions between electrons. Two of the most fundamental…
The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only…
A theory of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in single cubic crystals and its experimental verifications are presented for the current in the (001) plane. In contrast to the general belief that AMR and PHE in…