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In the present work, the current-voltage (I-V) characteristics in a coupled long Josephson junction based on magnesium diboride are studied by establishing a system of equations of phase differences of various inter- and intra-band channels…

Soft Condensed Matter · Physics 2021-03-30 S. P. Chimouriya , B. R. Ghimire , J. H. Kim

We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBi$_{2}$Te$_{4}$. In presence of an in-plane magnetic field, we find that the two…

Mesoscale and Nanoscale Physics · Physics 2023-07-05 Sang-Jun Choi , Hai-Peng Sun , Björn Trauzettel

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…

Materials Science · Physics 2010-12-21 S. G. Chigarev , E. M. Epshtein , I. V. Malikov , G. M. Mikhailov , P. E. Zilberman

A theoretical technique which allows to include contributions from non-orthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single barrier tunneling structure and a…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 J. Fransson , O. Eriksson , I. Sandlov

The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…

Mesoscale and Nanoscale Physics · Physics 2024-08-30 B. C. Lee

Magnetic tunnel junctions (MTJs) with partially oxidized 9 \AA AlO$_x$-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric…

Materials Science · Physics 2009-11-11 J. Ventura , R. Ferreira , J. B. Sousa , P. P. Freitas

Motivated by first-principles results for jellium and by surface-barrier shapes that are typically used in electron spectroscopies, the bias voltage in ballistic vacuum tunneling is treated in a heuristic manner. The presented approach…

Condensed Matter · Physics 2009-11-10 J. Henk , P. Bruno

We present experimental investigations of transport properties in the insulating phase of two-dimensional Josephson-junction arrays (JJAs) by systematically changing the ratio of Josephson energy $E_\mathrm{J}$ and charging energy…

Superconductivity · Physics 2022-11-24 Hiroki Ikegami , Yasunobu Nakamura

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…

Mesoscale and Nanoscale Physics · Physics 2008-02-26 R. Guerrero , D. Herranz , F. G. Aliev , F. Greullet , C. Tiusan , M. Hehn , F. Montaigne

The paper addresses the problem whether and how it is possible to detect the Luttinger-liquid behavior from the $IV$ curves for tunneling to 1D or quasi-1D conductors. The power-law non-ohmic $IV$ curve, which is usually considered as a…

Mesoscale and Nanoscale Physics · Physics 2019-10-09 E. B. Sonin

Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…

Mesoscale and Nanoscale Physics · Physics 2016-02-09 Zhongbo Yan , Shaolong Wan

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…

In this letter we consider Andreev tunneling between a normal metal and a one dimensional Josephson junction array with finite-range Coulomb energy. The $I-V$ characteristics strongly deviate from the classical linear Andreev current. We…

Condensed Matter · Physics 2009-10-28 G. Falci , Rosario Fazio , A. Tagliacozzo , G. Giaquinta

We study the nonlinear conductance through a quantum dot, specifically its dependence on the asymmetries in the tunnel couplings and bias voltages $V$, at low energies. Extending the microscopic Fermi-liquid theory for the Anderson impurity…

Mesoscale and Nanoscale Physics · Physics 2021-12-28 Kazuhiko Tsutsumi , Yoshimichi Teratani , Rui Sakano , Akira Oguri

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…

Mesoscale and Nanoscale Physics · Physics 2013-05-28 J. P. Cascales , D. Herranz , J. L. Sambricio , U. Ebels , J. A. Katine , F. G. Aliev

We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…

We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 R. Guerrero , F. G. Aliev , Y. Tserkovnyak , T. S. Santos , J. S. Moodera

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We…

Mesoscale and Nanoscale Physics · Physics 2022-02-09 S. Liu , D. J. P. de Sousa , M. Sammon , J. P. Wang , Tony Low

Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…

Materials Science · Physics 2015-05-13 S. G. Chigarev , E. M. Epshtein , P. E. Zilberman