Related papers: Spin pumping and inverse spin Hall effect in CoFeB…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Bismuth Selenide (Bi2Se3) is a topological insulator exhibiting helical spin polarization and strong spin-orbit coupling. The spin-orbit coupling links the charge current to spin current via the spin Hall effect (SHE). We demonstrate a…
We theoretically consider the spin-wave mode- and wavelength-dependent enhancement of the Gilbert damping in magnetic insulator--normal metal bilayers due to spin pumping as well as the enhancement's relation to direct and alternating…
Spin Hall magnetoresistance (SMR) is an intriguing spin-dependent transport phenomenon in bilayers consisting of non-magnetic and magnetic layers. Here, we report on the influence of longitudinal spin current absorption by the magnetic…
The spin Hall effect (SHE) is normally discussed in terms of a spin current, which is ill-defined in strongly spin-orbit-coupled systems because of spin non-conservation. In this work we propose an alternative view of SHE phenomena by…
The current-induced spin-orbit torque-based devices for magnetization switching are commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here…
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics…
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR).…
We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/YIG bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no…
Combining graphene with transition metal dichalcogenides (TMDs) leads to enhanced spin-orbit coupling (SOC) in the graphene. The induced SOC has a large effect on the low-energy part of the band structure leading to or stabilizing novel…
The spin Hall effect (SHE) is one of the promising phenomena to utilize a spin current as spintronics devices, and the theoretical understanding of its microscopic mechanism is essential to know how to control its response. Although the SHE…
Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
After one decade of the intensive theoretical and experimental explorations, whether interfacial spin-orbit coupling (ISOC) at metallic magnetic interfaces can effectively generate a spin current has remained in dispute. Here, utilizing the…
Spin transport properties of a coupled bilayer electron gas with Rashba spin-orbit coupling are studied. The definition of the spin currents in each layer as well as the corresponding continuity-like equations in the bilayer system are…
Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current…
Antiferromagnetic (AFM) materials recently have shown interest in the research in spintronics due to its zero stray magnetic field, high anisotropy, and spin orbit coupling. In this context, the bi-metallic AFM Mn2Au has drawn attention…
Orbital angular momentum has recently emerged as an important carrier of angular momentum in solids, offering new pathways for spin orbitronic functionality beyond conventional spin transport. Here, we investigate the orbital Hall effect…
The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…
In spinelectronics the spin degree of freedom is used to transmit and store information. Ideally this occurs without net charge currents in order to avoid energy dissipation due to Joule heating. To this end the ability to create pure spin…