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Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as…

The direct transition from an insulator to a superconductor (SC) in Fermi systems is a problem of long-standing interest, which necessarily goes beyond the standard BCS paradigm of superconductivity as a Fermi surface instability. We…

Superconductivity · Physics 2019-10-25 Yen Lee Loh , Mohit Randeria , Nandini Trivedi , Chia-Chen Chang , Richard Scalettar

In recent years, Majorana physics has attracted considerable attention in both theoretical and experimental studies due to exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to…

We show that nonequilibrium spin injection into a superconductor can generate an anomalous supercurrent or induce a phase gradient, even for spin voltages below the superconducting gap. Our mechanism does not require breaking time-reversal…

Superconductivity · Physics 2025-12-30 I. V. Tokatly , Y. Lu , F. S. Bergeret

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. We examine hybrid…

Mesoscale and Nanoscale Physics · Physics 2015-11-04 R. W. Reinthaler , G. Tkachov , E. M. Hankiewicz

A model, based on classical mechanics and thermodynamics and valid for \textit{all} superconductors, is devised to investigate the properties of the \textit{current-driven}, superconducting to normal transition. This process is shown to be…

General Physics · Physics 2019-12-23 Jacob Szeftel , Nicolas Sandeau , Michel Abou Ghantous

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…

GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…

Mesoscale and Nanoscale Physics · Physics 2017-04-14 A. R. Ullah , J. G. Gluschke , P. Krogstrup , C. B. Sørensen , J. Nygård , A. P. Micolich

Superconducting spintronics in hybrid superconductor/ferromagnet (S-F) heterostructures provides an exciting potential new class of device. The prototypical super-spintronic device is the superconducting spin-valve, where the critical…

NaAlSi is an sp electron superconductor crystallizing in a layered structure of the anti-PbFCl type with a relatively high transition temperature Tc of ~7 K. Recent electronic state calculations revealed the presence of topological nodal…

Superconductivity · Physics 2022-02-01 Takahiro Yamada , Daigorou Hirai , Hisanori Yamane , Zenji Hiroi

We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…

Mesoscale and Nanoscale Physics · Physics 2017-09-25 A. V. Bubis , A. O. Denisov , S. U. Piatrusha , I. E. Batov , J. Becker , J. Treu , D. Ruhstorfer , G. Koblmüller , V. S. Khrapai

We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…

Superconductivity · Physics 2014-10-15 E. D. Cherotchenko , T. Espinosa-Ortega , A. V. Nalitov , I. A. Shelykh , A. V. Kavokin

In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…

Mesoscale and Nanoscale Physics · Physics 2021-06-09 Ilia Golokolenov , Andrew Guthrie , Sergey Kafanov , Yuri Pashkin , Viktor Tsepelin

The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density…

Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at…

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a…

Mesoscale and Nanoscale Physics · Physics 2015-09-22 T. W. Larsen , K. D. Petersson , F. Kuemmeth , T. S. Jespersen , P. Krogstrup , J. Nygard , C. M. Marcus

In this work we report a systematic study of electrical current effects on superconducting properties of granular Y$_{1-x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ samples with x close to the critical Pr concentration above which the…

Superconductivity · Physics 2007-05-23 Y. Kopelevich , C. A. M. dos Santos , S. Moehlecke , A. J. S. Machado

Although the BCS theory of superconductivity is a well established theory, we have shown that the phenomenology predicted by this model is much richer than previously believed. By releasing the constraint that the attraction band is…

Superconductivity · Physics 2016-11-23 Dragos-Victor Anghel

By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross…

Mesoscale and Nanoscale Physics · Physics 2021-01-08 Sabbir A. Khan , Lukas Stampfer , Timo Mutas , Jung-Hyun Kang , Peter Krogstrup , Thomas S. Jespersen

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned…