Related papers: Gated InGaAs Detector Characterization with Sub-Pi…
In quantum communication systems, the precise estimation of the detector's response to the incoming light is necessary to avoid security breaches. The typical working regime uses a free-running single-photon avalanche diode in combination…
We present a detailed investigation of the afterpulse effect in silicon photomultipliers (SiPMs), using a dedicated structure with single-cell readout. This enables direct measurement of intrinsic device properties and observation of…
We present a method for a complete characterization of a femtosecond ultraviolet pulse when a fundamental near-infrared beam is also available. Our approach relies on generation of second harmonic from the pre-characterized fundamental,…
We derive an analytical expression for the count probability of a single photon detector for a wide range of input optical power that includes afterpulsing effects. We confirm the validity of the expression by fitting it to the data…
When a photo-diode is illuminated by a pulse train from a femtosecond laser, it generates microwaves components at the harmonics of the repetition rate within its bandwidth. The phase of these components (relative to the optical pulse…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…
We report measurements characterizing the performance of a kinetic inductance detector array designed for a wavelength of 25 microns and very low optical background level suitable for applications such as a far-infrared instrument on a…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor,…
A photon detector combining the two avalanche photon diodes (APD) has been demonstrated for qubit discrimination in 1550 nm. Spikes accompanied with the signals in gated-mode were canceled by balanced output from the two APDs. The spike…
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…
Semiconductor lasers offer native bifunctionality enabling coherent light emission and linear photodetection. They can also operate as sensitive two-photon absorption detectors due to the third-order nonlinearity of the heterostructure…
Two-photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C-band with a raw two-photon interference visibility of $V_{HOM}=(71.9\pm0.2)$ % is demonstrated. This is achieved by a two-fold approach: an improvement…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
The single-photon avalanche photodiode(SPAD) has been widely used in research on quantum optics. The afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most experiments and needs to be carefully…
State-of-the-art technology for pulse counter electronics offers an important range of commercial devices, but such systems are usually expensive due to the complex logic used for this task. The use of counting electronics in conjunction…
The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 \pm 0.1 ns are…
Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The…
Photonic integration is a promising route to miniaturise the hardware of quantum key distribution (QKD), yet the monolithic integration of single photon detectors remains a significant challenge. QKD receiver chips integrating…