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Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in…
Realization of quantum photonic devices requires coupling single quantum emitters to the mode of optical resonators. In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition…
Hexagonal boron nitride (h-BN) is a promising platform for quantum information processing due to its potential to host optically active defects with attractive optical and spin properties. Recent studies suggest that carbon trimers might be…
Hexagonal boron nitride (hBN) has emerged as a compelling platform for both classical and quantum technologies. In particular, the past decade has witnessed a surge of novel ideas and developments, which may be overwhelming for newcomers to…
The defect-mediated hexagonal boron nitride (hBN) supercell display the visible optical spectra and electronic characteristics. The defects in the hBN supercell include the atomic vacancy, antisite, antisite vacancy, and substitution of a…
Hexagonal boron nitride (h-BN) hosts pure single-photon emitters that have shown evidence of optically detected electronic spin dynamics. However, the electrical and chemical structure of these optically addressable spins is unknown, and…
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…
The ability of hexagonal boron nitride to host quantum emitters in the form of deep-level color centers makes it an important material for quantum photonic applications. This work utilizes a monolithic circular Bragg grating device to…
The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…
Hexagonal boron nitride exhibits two types of defects with great potential for quantum information technologies: single-photon emitters (SPEs) and one-dimensional grain boundaries hosting topologically-protected phonons, termed as…
Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Due to its…
Defects in wide band gap crystals have emerged as a promising platform for hosting colour centres that enable quantum photonic applications. Among these, hexagonal boron nitride (hBN), a van der Waals material, stands out for its ability to…
Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics,…
Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for the defect creation and control, as well as qubit accessibility. In this work, we select…
Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale…
Quantum enhanced sensing exploits the coherent dynamics of two-level systems (TLSs) to achieve exceptional sensitivities and measurement precision that surpass classical detection limits. While platforms such as nitrogen vacancy centers in…
Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation…
Color centers in h-BN are among the brightest emission centers known yet the origins of these emission centers are not well understood. Here, using first-principles calculations in combination with the generating function method, we…
Color centers in hexagonal boron nitride (hBN) advantageously combine excellent photophysical properties with a potential for integration in highly compact devices. Progress towards scalable integration necessitates a high quantum…
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…